4H-SiC neutron sensors based on ion implanted 10B neutron converter layer

Ludo Vermeeren; Fatima Issa; Laurent Ottaviani; Dora  Szalkai; Vanessa Vervisch; Abdallah Lyoussi; Raffaello Ferone; Andrej Kuznetsov; Mihai Lazar; Axel Klix; Olivier Palais; Anders Hallen

doi:10.1109/ANIMMA.2015.7465544

4H-SiC neutron sensors based on ion implanted 10B neutron converter layer

Ludo Vermeeren, Fatima Issa, Laurent Ottaviani, Dora Szalkai, Vanessa Vervisch, Abdallah Lyoussi, Raffaello Ferone, Andrej Kuznetsov, Mihai Lazar, Axel Klix, Olivier Palais, Anders Hallen

Research output

Abstract

In the framework of the I_SMART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, 10B ions have been implanted into the Al metallic contact of a p-n diode to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper.

Original language	English
Title of host publication	IEEE Conference Publications
Subtitle of host publication	2015 4th Intl. Conf. ANIMMA
Pages	1-5
Number of pages	5
ISBN (Electronic)	978-1-4799-9918-7
DOIs	https://doi.org/10.1109/ANIMMA.2015.7465544
State	Published - 5 May 2016
Event	2015 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications: International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications - Lisbon Duration: 20 Apr 2015 → 24 Apr 2015

Conference

Conference	2015 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications
Country/Territory	Portugal
City	Lisbon
Period	2015-04-20 → 2015-04-24

Access to Document

10.1109/ANIMMA.2015.7465544

Cite this

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title = "4H-SiC neutron sensors based on ion implanted 10B neutron converter layer",

abstract = "In the framework of the I_SMART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, 10B ions have been implanted into the Al metallic contact of a p-n diode to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper.",

keywords = "neutrons , silicor carbide, semiconductor device",

author = "Ludo Vermeeren and Fatima Issa and Laurent Ottaviani and Dora Szalkai and Vanessa Vervisch and Abdallah Lyoussi and Raffaello Ferone and Andrej Kuznetsov and Mihai Lazar and Axel Klix and Olivier Palais and Anders Hallen",

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Vermeeren, L, Issa, F, Ottaviani, L, Szalkai, D, Vervisch, V, Lyoussi, A, Ferone, R, Kuznetsov, A, Lazar, M, Klix, A, Palais, O & Hallen, A 2016, 4H-SiC neutron sensors based on ion implanted 10B neutron converter layer. in IEEE Conference Publications: 2015 4th Intl. Conf. ANIMMA. pp. 1-5, 2015 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications, Lisbon, Portugal, 2015-04-20. https://doi.org/10.1109/ANIMMA.2015.7465544

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AU - Vermeeren, Ludo

AU - Issa, Fatima

AU - Ottaviani, Laurent

AU - Szalkai, Dora

AU - Vervisch, Vanessa

AU - Lyoussi, Abdallah

AU - Ferone, Raffaello

AU - Kuznetsov, Andrej

AU - Lazar, Mihai

AU - Klix, Axel

AU - Palais, Olivier

AU - Hallen, Anders

N1 - Score=3

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N2 - In the framework of the I_SMART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, 10B ions have been implanted into the Al metallic contact of a p-n diode to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper.

AB - In the framework of the I_SMART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, 10B ions have been implanted into the Al metallic contact of a p-n diode to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper.

KW - neutrons

KW - silicor carbide

KW - semiconductor device

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