4H-SiC neutron sensors based on ion implanted 10B neutron converter layer

Ludo Vermeeren, Fatima Issa, Laurent Ottaviani, Dora Szalkai, Vanessa Vervisch, Abdallah Lyoussi, Raffaello Ferone, Andrej Kuznetsov, Mihai Lazar, Axel Klix, Olivier Palais, Anders Hallen

    Research output


    In the framework of the I_SMART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, 10B ions have been implanted into the Al metallic contact of a p-n diode to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper.
    Original languageEnglish
    Title of host publicationIEEE Conference Publications
    Subtitle of host publication2015 4th Intl. Conf. ANIMMA
    Number of pages5
    ISBN (Electronic)978-1-4799-9918-7
    StatePublished - 5 May 2016
    Event2015 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications: International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications - Lisbon
    Duration: 20 Apr 201524 Apr 2015


    Conference2015 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications

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