A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy

Cao Ying; Marco Van Uffelen; Laura Mont Casellas; Carlo Damiani; Emilio Ruiz Morales; Roberto Ranz Santana; Richard Meek; Bernard Haist; Wouter De Cock; Ludo Vermeeren; Michiel Steyaert; Paul Leroux

doi:10.1109/RADECS.2015.7365575

A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy

Cao Ying, Marco Van Uffelen, Laura Mont Casellas, Carlo Damiani, Emilio Ruiz Morales, Roberto Ranz Santana, Richard Meek, Bernard Haist, Wouter De Cock, Ludo Vermeeren, Michiel Steyaert, Paul Leroux

Research output › peer-review

Abstract

The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.

Original language	English
Title of host publication	Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Place of Publication	Moskow
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Print)	978-1-5090-0232-0
DOIs	https://doi.org/10.1109/RADECS.2015.7365575
State	Published - Jan 2015
Event	2015 - RADECS: 15th European Conference on Radiation and Its Effects on Components and Systems - Moscow Duration: 14 Sep 2015 → 18 Sep 2015

Conference

Conference	2015 - RADECS
Country/Territory	Russian Federation
City	Moscow
Period	2015-09-14 → 2015-09-18

Access to Document

10.1109/RADECS.2015.7365575License: Unspecified

Cite this

Ying, C., Van Uffelen, M., Mont Casellas, L., Damiani, C., Ruiz Morales, E., Ranz Santana, R., Meek, R., Haist, B., De Cock, W., Vermeeren, L., Steyaert, M., & Leroux, P. (2015). A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy. In Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RADECS.2015.7365575

@inproceedings{79406096bf3b4b558455e90709767a4b,

title = "A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy",

abstract = "The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.",

keywords = "Temperature sensors, Bipolar transistors, Leakage currents, CMOS technology, Radiation effects, CMOS integrated circuits, Temperature measurement",

author = "Cao Ying and {Van Uffelen}, Marco and {Mont Casellas}, Laura and Carlo Damiani and {Ruiz Morales}, Emilio and {Ranz Santana}, Roberto and Richard Meek and Bernard Haist and {De Cock}, Wouter and Ludo Vermeeren and Michiel Steyaert and Paul Leroux",

note = "Score=3; 2015 - RADECS : 15th European Conference on Radiation and Its Effects on Components and Systems ; Conference date: 14-09-2015 Through 18-09-2015",

year = "2015",

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doi = "10.1109/RADECS.2015.7365575",

language = "English",

isbn = "978-1-5090-0232-0",

pages = "1--4",

booktitle = "Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)",

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Ying, C, Van Uffelen, M, Mont Casellas, L, Damiani, C, Ruiz Morales, E, Ranz Santana, R, Meek, R, Haist, B, De Cock, W , Vermeeren, L, Steyaert, M & Leroux, P 2015, A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy. in Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) . Institute of Electrical and Electronics Engineers Inc., Moskow, pp. 1-4, 2015 - RADECS, Moscow, Russian Federation, 2015-09-14. https://doi.org/10.1109/RADECS.2015.7365575

A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy. / Ying, Cao; Van Uffelen, Marco; Mont Casellas, Laura et al.
Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) . Moskow: Institute of Electrical and Electronics Engineers Inc., 2015. p. 1-4.

Research output › peer-review

TY - GEN

T1 - A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy

AU - Ying, Cao

AU - Van Uffelen, Marco

AU - Mont Casellas, Laura

AU - Damiani, Carlo

AU - Ruiz Morales, Emilio

AU - Ranz Santana, Roberto

AU - Meek, Richard

AU - Haist, Bernard

AU - De Cock, Wouter

AU - Vermeeren, Ludo

AU - Steyaert, Michiel

AU - Leroux, Paul

N1 - Score=3

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Y1 - 2015/1

N2 - The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.

AB - The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.

KW - Temperature sensors

KW - Bipolar transistors

KW - Leakage currents

KW - CMOS technology

KW - Radiation effects

KW - CMOS integrated circuits

KW - Temperature measurement

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DO - 10.1109/RADECS.2015.7365575

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SN - 978-1-5090-0232-0

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EP - 4

BT - Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

PB - Institute of Electrical and Electronics Engineers Inc.

CY - Moskow

T2 - 2015 - RADECS

Y2 - 14 September 2015 through 18 September 2015

ER -

Ying C, Van Uffelen M, Mont Casellas L, Damiani C, Ruiz Morales E, Ranz Santana R et al. A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy. In Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) . Moskow: Institute of Electrical and Electronics Engineers Inc. 2015. p. 1-4 doi: 10.1109/RADECS.2015.7365575