A 4.5 MGy TID-Tolerant CMOS bandgap reference circuit using a dynamic base leakage compensation technique

Ying Cao; Wouter De Cock; Michiel Steyaert; Paul Leroux

doi:10.1109/TNS.2012.2233755

A 4.5 MGy TID-Tolerant CMOS bandgap reference circuit using a dynamic base leakage compensation technique

Ying Cao, Wouter De Cock, Michiel Steyaert, Paul Leroux

Research output › peer-review

21 Scopus citations

Abstract

The total-ionizing-dose (TID) radiation tolerance of bandgap references in deep-submicron CMOS technology is generally limited bythe radiation introduced leakage current in diodes. An analysis of this phenomenon is given in this paper, and a dynamic base leakage compensation (DBLC) technique is proposed to improve the radiation hardness of a bandgap reference built in a standard 0.13 μm CMOS technology. A temperature coefficient of 15 ppm/°C from 40̈g;C to 125°C is measured before irradiation. The voltage variation from 0°C to 100°C is only ±1 mV for an output voltage of 600 mV. Gamma irradiation assessment proves that the bandgap reference is tolerant to a total ionizing dose of at least 4.5 MGy. The output reference voltage exhibits a variation of less than 3% during the entire experiment, when the chip is irradiated by gamma ray at a dose rate of 27 kGy/h.

Original language	English
Article number	6428663
Pages (from-to)	2819-2824
Number of pages	6
Journal	IEEE transactions on nuclear Science
Volume	60
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2012.2233755
State	Published - 2013

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2012.2233755

Cite this

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title = "A 4.5 MGy TID-Tolerant CMOS bandgap reference circuit using a dynamic base leakage compensation technique",

abstract = "The total-ionizing-dose (TID) radiation tolerance of bandgap references in deep-submicron CMOS technology is generally limited bythe radiation introduced leakage current in diodes. An analysis of this phenomenon is given in this paper, and a dynamic base leakage compensation (DBLC) technique is proposed to improve the radiation hardness of a bandgap reference built in a standard 0.13 μm CMOS technology. A temperature coefficient of 15 ppm/°C from 4{\"0}g;C to 125°C is measured before irradiation. The voltage variation from 0°C to 100°C is only ±1 mV for an output voltage of 600 mV. Gamma irradiation assessment proves that the bandgap reference is tolerant to a total ionizing dose of at least 4.5 MGy. The output reference voltage exhibits a variation of less than 3% during the entire experiment, when the chip is irradiated by gamma ray at a dose rate of 27 kGy/h.",

keywords = "Bandgap, dynamic base leakage compensation, low-voltage, radiation-hardened, total ionizing dose",

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AU - Leroux, Paul

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AB - The total-ionizing-dose (TID) radiation tolerance of bandgap references in deep-submicron CMOS technology is generally limited bythe radiation introduced leakage current in diodes. An analysis of this phenomenon is given in this paper, and a dynamic base leakage compensation (DBLC) technique is proposed to improve the radiation hardness of a bandgap reference built in a standard 0.13 μm CMOS technology. A temperature coefficient of 15 ppm/°C from 40̈g;C to 125°C is measured before irradiation. The voltage variation from 0°C to 100°C is only ±1 mV for an output voltage of 600 mV. Gamma irradiation assessment proves that the bandgap reference is tolerant to a total ionizing dose of at least 4.5 MGy. The output reference voltage exhibits a variation of less than 3% during the entire experiment, when the chip is irradiated by gamma ray at a dose rate of 27 kGy/h.

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