Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides

F. Geenen, W. Knaepen, F. Moens, Ann Leenaers, Sven Van den Berghe, C. Detavernier

    Research outputpeer-review


    Silicon or germanium-based transistors are nowadays used in direct contact with silicide or germanide crystalline alloys for semiconductor device applications. Since these compounds are formed at elevated temperatures, accurate knowledge of the thermal expansion of both substrate and the contact is important to address temperature depending effects such as thermal stress. Here we report the linear coefficients of thermal expansion of Ni-, Pd- and t-based mono-germanides, mono-silicides and di-metal-silicides as determined by powderbased x-ray diffraction between 300 and 1225 K. The investigated mono-metallic compounds, all sharing the MnP crystal structure, as well as Pd2Si and Pt2Si exhibit anisotropic expansion. By consequence, this anisotropic behaviour should be taken into account for evaluating the crystal unit’s cell at elevated temperatures.
    Original languageEnglish
    Article number275307
    Number of pages6
    JournalJournal of Physics D: Applied Physics
    Issue number27
    StatePublished - 15 Jun 2016

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