Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor

Jonas Vande Pitte; Inge Uytdenhouwen; Jan Wagemans; Inge Uytdenhouwen; C. Detavernier; Lauwaert j.; Andrei Gusarov

doi:10.4028/www.scientific.net/MSF.963.362

Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor

Jonas Vande Pitte, Inge Uytdenhouwen, Jan Wagemans, Inge Uytdenhouwen, C. Detavernier, Lauwaert j., Andrei Gusarov

Nuclear Systems Measurements

Research output › peer-review

Abstract

Post-irradiation data on the neutron-induced swelling behaviour and resistivity changes in silicon carbide often does not show a clear trend. This makes a quantitative comparison between different studies difficult. To address the diverging results after irradiation in different studies, a thorough reference study is performed on high quality -silicon carbide. The results show the response to neutron irradiation may be significantly influenced by structural defects present before irradiation. These findings open a way to improve the accuracy of silicon carbide irradiation temperature monitors

Original language	English
Pages (from-to)	362-366
Number of pages	5
Journal	Materials Science Forum
Volume	963
Issue number	662-9752
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.963.362
State	Published - 19 Jul 2019

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10.4028/www.scientific.net/MSF.963.362

Cite this

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title = "Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor",

abstract = "Post-irradiation data on the neutron-induced swelling behaviour and resistivity changes in silicon carbide often does not show a clear trend. This makes a quantitative comparison between different studies difficult. To address the diverging results after irradiation in different studies, a thorough reference study is performed on high quality -silicon carbide. The results show the response to neutron irradiation may be significantly influenced by structural defects present before irradiation. These findings open a way to improve the accuracy of silicon carbide irradiation temperature monitors",

keywords = "material characterization, irradiation effects, resistivity, irradiation swelling",

author = "{Vande Pitte}, Jonas and Inge Uytdenhouwen and Jan Wagemans and Inge Uytdenhouwen and C. Detavernier and Lauwaert j. and Andrei Gusarov",

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T1 - Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor

AU - Vande Pitte, Jonas

AU - Uytdenhouwen, Inge

AU - Wagemans, Jan

AU - Detavernier, C.

AU - j., Lauwaert

AU - Gusarov, Andrei

A2 - Uytdenhouwen, Inge

N1 - Score=10

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Y1 - 2019/7/19

N2 - Post-irradiation data on the neutron-induced swelling behaviour and resistivity changes in silicon carbide often does not show a clear trend. This makes a quantitative comparison between different studies difficult. To address the diverging results after irradiation in different studies, a thorough reference study is performed on high quality -silicon carbide. The results show the response to neutron irradiation may be significantly influenced by structural defects present before irradiation. These findings open a way to improve the accuracy of silicon carbide irradiation temperature monitors

AB - Post-irradiation data on the neutron-induced swelling behaviour and resistivity changes in silicon carbide often does not show a clear trend. This makes a quantitative comparison between different studies difficult. To address the diverging results after irradiation in different studies, a thorough reference study is performed on high quality -silicon carbide. The results show the response to neutron irradiation may be significantly influenced by structural defects present before irradiation. These findings open a way to improve the accuracy of silicon carbide irradiation temperature monitors

KW - material characterization

KW - irradiation effects

KW - resistivity

KW - irradiation swelling

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/37188170

U2 - 10.4028/www.scientific.net/MSF.963.362

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EP - 366

JO - Materials Science Forum

JF - Materials Science Forum

IS - 662-9752

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