Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor

Jonas Vande Pitte, Inge Uytdenhouwen, Jan Wagemans, Inge Uytdenhouwen, C. Detavernier, Lauwaert j., Andrei Gusarov

Research outputpeer-review


Post-irradiation data on the neutron-induced swelling behaviour and resistivity changes in silicon carbide often does not show a clear trend. This makes a quantitative comparison between different studies difficult. To address the diverging results after irradiation in different studies, a thorough reference study is performed on high quality -silicon carbide. The results show the response to neutron irradiation may be significantly influenced by structural defects present before irradiation. These findings open a way to improve the accuracy of silicon carbide irradiation temperature monitors
Original languageEnglish
Pages (from-to)362-366
Number of pages5
JournalMaterials Science Forum
Issue number662-9752
StatePublished - 19 Jul 2019

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