Comparison of the effect of fast-neutron irradiation on the induced tunneling states in silicon and quartz

M. Coeck, Christiane Laermans, E. Peeters

    Research outputpeer-review

    Abstract

    We have performed low-temperature ultrasonic attenuation measurements on bulk single-crystalline silicon irradiated with a fast-neutron dose of 3.2 × 1021 n/cm2 (E > 0.1 MeV) at a frequency of 283 MHz. The data are analyzed in the framework of the tunneling model (TM). A comparison of these results with those obtained from similar measurements performed on neutron-irradiated quartz is made in view of the differences in radiation damage. We found that the irradiation dose has to be three orders of magnitude higher for silicon than for quartz in order to obtain the same effect in the ultrasonic attenuation.

    Original languageEnglish
    Pages (from-to)585-588
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume141
    Issue number1-4
    DOIs
    StatePublished - May 1998

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Instrumentation

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