Conceptual design of a MGy tolerant integrated signal conditioning circuit in 130nm and 700nm CMOS

J. Verbeeck, M. Van Uffelen, M. Steyaert, P. Leroux

    Research outputpeer-review


    The conceptual design of a MGy tolerant configurable discrete time signal conditioning circuit in a 130nm and 700nm CMOS technology is presented, for use with resistive sensors like strain gauge pressure sensors. The design features a differential preamplifier using a Correlated Double Sampling (CDS) architecture at a sample rate of 20kHz. Furthermore, a high voltage buffer and level shifter is presented in the 0.7μm design. The gain is digitally controllable between 27 and 400. The nominal input referred noise voltage is only 8.6μV at room temperature. The circuits have a simulated radiation tolerance of more than 1MGy. Simulations of the radiation behaviour are based on results obtained from [1],[2].

    Original languageEnglish
    Article numberC01017
    JournalJournal of Instrumentation
    Issue number1
    StatePublished - Jan 2012

    ASJC Scopus subject areas

    • Instrumentation
    • Mathematical Physics

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