Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing

Shaoren Deng, Sammy Verbruggen, Silvia Leenaerts, Johan Martens, Sven Van den Berghe, Kilian Devloo-Casier, Wouter Devulder, Jolien Dendooven, Davy Deduytsche, Christophe Detavernier

    Research outputpeer-review


    In order to narrow the band gap of TiO2, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO2 and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO2 and PEALD TiN, the as synthesized TiOxNy films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO2 films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO2 along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.
    Original languageEnglish
    Pages (from-to)01A123-01A123
    Issue number1
    StatePublished - Jan 2014

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