@inproceedings{381d371b8b83453e820ac2c8c69afe5b,
title = "Correlation between ir absorption and dsc in hydrogenated amorphous silicon.",
abstract = "Measurements of differential scanning calorimetry (DSC) in the temperature range 25 - 600 degree C were made on amorphous silicon deposited in a glow discharge system at three different substrate temperatures: T//S equals 40, 150 and 275 degree C. The results were compared with IR absorption measurements performed on as-deposited and annealed samples in order to study hydrogen evolution. The DSC thermograms revealed the existence of two exothermic processes occurring between 300 - 350 degree C and 350 - 500 degree C, respectively. The low temperature process is assigned to a local rearrangement of the amorphous network without measurable hydrogen loss; the second one originates from hydrogen evolution.",
author = "P. Gunst and J. Smeets and M. Rotti and {Van Roy}, M. and M. Denayer and P. Nagels",
year = "1984",
language = "English",
isbn = "9027717249",
series = "Commission of the European Communities, (Report) EUR",
publisher = "D. Reidel Publishing company",
pages = "769--773",
booktitle = "Commission of the European Communities, (Report) EUR",
}