Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements

Michèle Coeck; N. Balcaen; Toon van Hoecke; B. Van Waeyenberge; D. Segers; Charles Dauwe; Christiane Laermans

doi:10.1063/1.372398

Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements

Michèle Coeck, N. Balcaen, Toon van Hoecke, B. Van Waeyenberge, D. Segers, Charles Dauwe, Christiane Laermans

Research output › peer-review

Abstract

Neutron transmutation doping of n-type silicon was obtained by irradiating the samples with thermal neutrons in order to create P atoms. Positron lifetime measurements were carried out and the evolution of the induced defects was studied by thermal annealing of the samples. The annealing out of the divacancy was seen between 200 and 350°C. Around 700°C large vacancy clusters (containing about eight vacancies) are formed. All the defects are annealed above 800°C.

Original language	English
Pages (from-to)	3674-3677
Number of pages	4
Journal	Journal of Applied Physics
Volume	87
Issue number	8
DOIs	https://doi.org/10.1063/1.372398
State	Published - 15 Apr 2000

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.372398

Cite this

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abstract = "Neutron transmutation doping of n-type silicon was obtained by irradiating the samples with thermal neutrons in order to create P atoms. Positron lifetime measurements were carried out and the evolution of the induced defects was studied by thermal annealing of the samples. The annealing out of the divacancy was seen between 200 and 350°C. Around 700°C large vacancy clusters (containing about eight vacancies) are formed. All the defects are annealed above 800°C.",

keywords = "Positron annihalation spectroscopy, NTD silicon, Silicon",

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AU - Coeck, Michèle

AU - Balcaen, N.

AU - van Hoecke, Toon

AU - Van Waeyenberge, B.

AU - Segers, D.

AU - Dauwe, Charles

AU - Laermans, Christiane

PY - 2000/4/15

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AB - Neutron transmutation doping of n-type silicon was obtained by irradiating the samples with thermal neutrons in order to create P atoms. Positron lifetime measurements were carried out and the evolution of the induced defects was studied by thermal annealing of the samples. The annealing out of the divacancy was seen between 200 and 350°C. Around 700°C large vacancy clusters (containing about eight vacancies) are formed. All the defects are annealed above 800°C.

KW - Positron annihalation spectroscopy

KW - NTD silicon

KW - Silicon

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