Design and assessment of a high gamma-dose tolerant VCSEL driver with discrete SiGe HBTs

Paul Leroux, Marco Van Uffelen, Francis Berghmans, A. Giraud

    Research outputpeer-review

    Abstract

    A digital VCSEL driver has been designed, simulated and assessed under radiation, using discrete SiGe HBTs. The circuit tolerates high levels of gamma radiation, up to 12 MGy, features less than 2 % drift in the forward current of the VCSEL and operates well above 10 MHz. The output duty cycle shows notable degradation at 200 kHz, enabling the design of robust analog and digital communication systems using pulse-width-modulation (PWM) schemes.
    Original languageEnglish
    Pages (from-to)2033-2039
    JournalIEEE transactions on nuclear Science
    Volume53
    Issue number4
    DOIs
    StatePublished - Aug 2006
    EventRadiation and its Effects on Components and Systems (RADECS) - IEEE, Cap d'Agde
    Duration: 19 Sep 200523 Sep 2005

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