Design and assessment of a high gamma-dose tolerant VCSEL driver with discrete SiGe HBT's

P. Leroux, M. Van Uffelen, F. Berghmans, Alain Giraud

    Research outputpeer-review

    Abstract

    A digital VCSEL driver has been designed, simulated and assessed under radiation, using discrete SiGe HBT's. The circuit tolerates high levels of gamma radiation, up to 12 MGy, features less than 2% drift in the forward current of the VCSEL and operates well above 10 MHz. The output duty cycle shows no notable degradation at 200 kHz, enabling the design of robust analog and digital communication systems using pulse-width-modulation (PWM) schemes. International Experimental Thermonuclear fusion Reactor (ITER), optical transmitter, laser driver, SiGe HBT, radiation effects, vertical-cavity surface-emitting laser (VCSEL).

    Original languageEnglish
    Title of host publicationRADECS 2005
    Subtitle of host publicationProceedings of the 8th European Conference on Radiation and Its Effects on Components and Systems
    Place of PublicationFrance
    PagesJ21-J27
    DOIs
    StatePublished - 2005
    Event2005 - RADECS: 8th European Conference on Radiation and Its Effects on Components and Systems - Université Montpellier, Cap d'Agde
    Duration: 19 Sep 200523 Sep 2005
    https://ieeexplore.ieee.org/xpl/conhome/4365537/proceeding

    Publication series

    NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

    Conference

    Conference2005 - RADECS
    Country/TerritoryFrance
    CityCap d'Agde
    Period2005-09-192005-09-23
    Internet address

    ASJC Scopus subject areas

    • Radiation
    • Electrical and Electronic Engineering

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