Design, Assessment and Modeling of an Integrated 0.4 µm SiGe Bipolar VCSEL Driver under gamma-radiation

Paul Leroux; Wouter De Cock; Marco Van Uffelen; Michiel Steyaert; Marc Schyns

Design, Assessment and Modeling of an Integrated 0.4 µm SiGe Bipolar VCSEL Driver under gamma-radiation

Paul Leroux, Wouter De Cock, Marco Van Uffelen, Michiel Steyaert, Marc Schyns

Research output › peer-review

Abstract

This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4µm, which is part of the device library in a commercial 0.35µm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

Original language	English
Title of host publication	RADECS 2008 Workshop - Proceedings of the 8th European Workshop on Radiation Effects on Components and Systems
Place of Publication	Jyväskylä, Finland
Pages	53-58
State	Published - 12 Sep 2008
Event	RADECS - 2008: 8th European Workshop on Radiation and Its Effects on Components and Systems - Jyväskylä Duration: 10 Sep 2008 → 12 Sep 2008

Conference

Conference	RADECS - 2008
Country/Territory	Finland
City	Jyväskylä
Period	2008-09-10 → 2008-09-12

Cite this

@inproceedings{d5ef29cb080748fb95f860d26b50fea3,

title = "Design, Assessment and Modeling of an Integrated 0.4 µm SiGe Bipolar VCSEL Driver under gamma-radiation",

abstract = "This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4µm, which is part of the device library in a commercial 0.35µm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.",

keywords = "total dose effects, VCSEL driver, gamma-radiation, SiGe HBT, radiation hard, IC design",

author = "Paul Leroux and {De Cock}, Wouter and {Van Uffelen}, Marco and Michiel Steyaert and Marc Schyns",

note = "Score = 1; RADECS - 2008 : 8th European Workshop on Radiation and Its Effects on Components and Systems ; Conference date: 10-09-2008 Through 12-09-2008",

year = "2008",

month = sep,

day = "12",

language = "English",

pages = "53--58",

booktitle = "RADECS 2008 Workshop - Proceedings of the 8th European Workshop on Radiation Effects on Components and Systems",

}

Leroux, P, De Cock, W , Van Uffelen, M, Steyaert, M & Schyns, M 2008, Design, Assessment and Modeling of an Integrated 0.4 µm SiGe Bipolar VCSEL Driver under gamma-radiation. in RADECS 2008 Workshop - Proceedings of the 8th European Workshop on Radiation Effects on Components and Systems. Jyväskylä, Finland, pp. 53-58, RADECS - 2008, Jyväskylä, Finland, 2008-09-10.

TY - GEN

T1 - Design, Assessment and Modeling of an Integrated 0.4 µm SiGe Bipolar VCSEL Driver under gamma-radiation

AU - Leroux, Paul

AU - De Cock, Wouter

AU - Van Uffelen, Marco

AU - Steyaert, Michiel

A2 - Schyns, Marc

N1 - Score = 1

PY - 2008/9/12

Y1 - 2008/9/12

N2 - This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4µm, which is part of the device library in a commercial 0.35µm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

AB - This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4µm, which is part of the device library in a commercial 0.35µm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

KW - total dose effects

KW - VCSEL driver

KW - gamma-radiation

KW - SiGe HBT

KW - radiation hard

KW - IC design

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_95972

UR - http://knowledgecentre.sckcen.be/so2/bibref/5678

M3 - In-proceedings paper

SP - 53

EP - 58

BT - RADECS 2008 Workshop - Proceedings of the 8th European Workshop on Radiation Effects on Components and Systems

CY - Jyväskylä, Finland

T2 - RADECS - 2008

Y2 - 10 September 2008 through 12 September 2008

ER -