Design, assessment and modeling of an integrated 0.4 m SiGe Bipolar VCSEL driver under γ-radiation

P. Leroux; Wouter De Cock; Marco Van Uffelen; Michiel S.J. Steyaert

doi:10.1109/RADECS.2008.5782683

Design, assessment and modeling of an integrated 0.4 m SiGe Bipolar VCSEL driver under γ-radiation

P. Leroux, Wouter De Cock, Marco Van Uffelen, Michiel S.J. Steyaert

Research output › peer-review

Abstract

This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4m, which is part of the device library in a commercial 0.35m SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

Original language	English
Title of host publication	2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008
Pages	53-58
Number of pages	6
DOIs	https://doi.org/10.1109/RADECS.2008.5782683
State	Published - 2008
Event	RADECS - 2008: 8th European Workshop on Radiation and Its Effects on Components and Systems - Jyväskylä Duration: 10 Sep 2008 → 12 Sep 2008

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Conference

Conference	RADECS - 2008
Country/Territory	Finland
City	Jyväskylä
Period	2008-09-10 → 2008-09-12

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2008.5782683License: Unspecified

Cite this

Leroux, P., De Cock, W., Van Uffelen, M., & Steyaert, M. S. J. (2008). Design, assessment and modeling of an integrated 0.4 m SiGe Bipolar VCSEL driver under γ-radiation. In 2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008 (pp. 53-58). Article 5782683 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2008.5782683

Leroux, P. ; De Cock, Wouter ; Van Uffelen, Marco et al. / Design, assessment and modeling of an integrated 0.4 m SiGe Bipolar VCSEL driver under γ-radiation. 2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008. 2008. pp. 53-58 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

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title = "Design, assessment and modeling of an integrated 0.4 m SiGe Bipolar VCSEL driver under γ-radiation",

abstract = "This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4m, which is part of the device library in a commercial 0.35m SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.",

keywords = "Gamma-radiation, IC design, Radiation hard, SiGe HBT, Total dose effects, VCSEL driver",

author = "P. Leroux and {De Cock}, Wouter and {Van Uffelen}, Marco and Steyaert, {Michiel S.J.}",

year = "2008",

doi = "10.1109/RADECS.2008.5782683",

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note = "RADECS - 2008 : 8th European Workshop on Radiation and Its Effects on Components and Systems ; Conference date: 10-09-2008 Through 12-09-2008",

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Leroux, P, De Cock, W , Van Uffelen, M & Steyaert, MSJ 2008, Design, assessment and modeling of an integrated 0.4 m SiGe Bipolar VCSEL driver under γ-radiation. in 2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008., 5782683, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, pp. 53-58, RADECS - 2008, Jyväskylä, Finland, 2008-09-10. https://doi.org/10.1109/RADECS.2008.5782683

Design, assessment and modeling of an integrated 0.4 m SiGe Bipolar VCSEL driver under γ-radiation. / Leroux, P.; De Cock, Wouter ; Van Uffelen, Marco et al.
2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008. 2008. p. 53-58 5782683 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output › peer-review

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N2 - This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4m, which is part of the device library in a commercial 0.35m SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

AB - This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4m, which is part of the device library in a commercial 0.35m SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

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KW - Radiation hard

KW - SiGe HBT

KW - Total dose effects

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Leroux P, De Cock W , Van Uffelen M, Steyaert MSJ. Design, assessment and modeling of an integrated 0.4 m SiGe Bipolar VCSEL driver under γ-radiation. In 2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008. 2008. p. 53-58. 5782683. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2008.5782683