Design, assessment and modeling of an integrated 0.4 m SiGe Bipolar VCSEL driver under γ-radiation

P. Leroux, Wouter De Cock, Marco Van Uffelen, Michiel S.J. Steyaert

    Research outputpeer-review


    This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4m, which is part of the device library in a commercial 0.35m SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

    Original languageEnglish
    Title of host publication2008 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2008
    Number of pages6
    StatePublished - 2008
    EventRADECS - 2008: 8th European Workshop on Radiation and Its Effects on Components and Systems - Jyväskylä
    Duration: 10 Sep 200812 Sep 2008

    Publication series

    NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS


    ConferenceRADECS - 2008

    ASJC Scopus subject areas

    • Radiation
    • Electrical and Electronic Engineering

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