Design of a MGy tolerant instrumentation amplifier using a correlated double sampling technique in 130 nm CMOS

Jens Verbeeck; Marco Van Uffelen; Michiel S.J. Steyaert; Paul Leroux

doi:10.1109/RADECS.2011.6131389

Design of a MGy tolerant instrumentation amplifier using a correlated double sampling technique in 130 nm CMOS

Jens Verbeeck, Marco Van Uffelen, Michiel S.J. Steyaert, Paul Leroux

Research output › peer-review

Abstract

In this paper a radiation tolerant configurable instrumentation amplifier for use with resistive sensors, like strain gauge pressure sensors, is presented. The design features a 1.5 V differential amplifier, consuming 1.5 mW and utilizing a correlated double sampling technique (CDS) with a sample frequency of 20 kHz. The gain of the amplifier is digitally configurable between 27 and 400 and the input referred noise density equals 8.6 μV at room temperature. The circuit has a simulated radiation tolerance exceeding 1 MGy.

Original language	English
Title of host publication	RADECS 2011
Subtitle of host publication	12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings
Pages	156-159
Number of pages	4
DOIs	https://doi.org/10.1109/RADECS.2011.6131389
State	Published - 2011
Event	RADECS 2011: European Conference on Radiation and its Effects on Components and Systems - Sevilla Duration: 19 Sep 2011 → 23 Sep 2011 https://ieeexplore.ieee.org/xpl/conhome/6123710/proceeding

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Conference

Conference	RADECS 2011
Abbreviated title	RADECS
Country/Territory	Spain
City	Sevilla
Period	2011-09-19 → 2011-09-23
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6123710/proceeding

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2011.6131389License: Unspecified

Cite this

Verbeeck, J., Van Uffelen, M., Steyaert, M. S. J., & Leroux, P. (2011). Design of a MGy tolerant instrumentation amplifier using a correlated double sampling technique in 130 nm CMOS. In RADECS 2011: 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings (pp. 156-159). Article 6131389 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2011.6131389

Verbeeck, Jens ; Van Uffelen, Marco ; Steyaert, Michiel S.J. et al. / Design of a MGy tolerant instrumentation amplifier using a correlated double sampling technique in 130 nm CMOS. RADECS 2011: 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. pp. 156-159 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

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title = "Design of a MGy tolerant instrumentation amplifier using a correlated double sampling technique in 130 nm CMOS",

abstract = "In this paper a radiation tolerant configurable instrumentation amplifier for use with resistive sensors, like strain gauge pressure sensors, is presented. The design features a 1.5 V differential amplifier, consuming 1.5 mW and utilizing a correlated double sampling technique (CDS) with a sample frequency of 20 kHz. The gain of the amplifier is digitally configurable between 27 and 400 and the input referred noise density equals 8.6 μV at room temperature. The circuit has a simulated radiation tolerance exceeding 1 MGy.",

keywords = "Analog integrated circuits, CMOS technology, Pressure gauges, Reactor instrumentation, Switched capacitor circuits",

author = "Jens Verbeeck and {Van Uffelen}, Marco and Steyaert, {Michiel S.J.} and Paul Leroux",

year = "2011",

doi = "10.1109/RADECS.2011.6131389",

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series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",

pages = "156--159",

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note = "RADECS 2011 : European Conference on Radiation and its Effects on Components and Systems, RADECS ; Conference date: 19-09-2011 Through 23-09-2011",

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Verbeeck, J, Van Uffelen, M, Steyaert, MSJ & Leroux, P 2011, Design of a MGy tolerant instrumentation amplifier using a correlated double sampling technique in 130 nm CMOS. in RADECS 2011: 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings., 6131389, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, pp. 156-159, RADECS 2011, Sevilla, Spain, 2011-09-19. https://doi.org/10.1109/RADECS.2011.6131389

Design of a MGy tolerant instrumentation amplifier using a correlated double sampling technique in 130 nm CMOS. / Verbeeck, Jens; Van Uffelen, Marco; Steyaert, Michiel S.J. et al.
RADECS 2011: 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. p. 156-159 6131389 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output › peer-review

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KW - Analog integrated circuits

KW - CMOS technology

KW - Pressure gauges

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Verbeeck J, Van Uffelen M, Steyaert MSJ, Leroux P. Design of a MGy tolerant instrumentation amplifier using a correlated double sampling technique in 130 nm CMOS. In RADECS 2011: 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. p. 156-159. 6131389. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2011.6131389