Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

Barbara Karches; Jonas Schön; Heiko Gerstenberg; Gabriele Hampel; Patricia Krenckel; Christian Plonka; Bernard Ponsard; Stephan Riepe; Christian Stieghorst; Norbert Wiehl

doi:10.1515/ract-2016-2687

Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

Barbara Karches, Jonas Schön, Heiko Gerstenberg, Gabriele Hampel, Patricia Krenckel, Christian Plonka, Bernard Ponsard, Stephan Riepe, Christian Stieghorst, Norbert Wiehl

Research output › peer-review

Abstract

In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations

Original language	English
Pages (from-to)	569-576
Number of pages	8
Journal	Radiochimica Acta
Volume	105
Issue number	7
DOIs	https://doi.org/10.1515/ract-2016-2687
State	Published - 1 Oct 2017

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Cite this

@article{8335cb4e1af14d67aa4c6c09b7443f48,

title = "Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis",

abstract = "In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations",

keywords = "Instrumental Neutron Activiation Analysis, Transition metals, Solar grade silicon, Directional solidification",

author = "Barbara Karches and Jonas Sch{\"o}n and Heiko Gerstenberg and Gabriele Hampel and Patricia Krenckel and Christian Plonka and Bernard Ponsard and Stephan Riepe and Christian Stieghorst and Norbert Wiehl",

note = "Score=10",

year = "2017",

month = oct,

day = "1",

doi = "10.1515/ract-2016-2687",

language = "English",

volume = "105",

pages = "569--576",

journal = "Radiochimica Acta",

issn = "0033-8230",

publisher = "Walter de Gruyter GmbH",

number = "7",

}

TY - JOUR

T1 - Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

AU - Karches, Barbara

AU - Schön, Jonas

AU - Gerstenberg, Heiko

AU - Hampel, Gabriele

AU - Krenckel, Patricia

AU - Plonka, Christian

AU - Ponsard, Bernard

AU - Riepe, Stephan

AU - Stieghorst, Christian

AU - Wiehl, Norbert

N1 - Score=10

PY - 2017/10/1

Y1 - 2017/10/1

N2 - In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations

AB - In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations

KW - Instrumental Neutron Activiation Analysis

KW - Transition metals

KW - Solar grade silicon

KW - Directional solidification

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/35782985

U2 - 10.1515/ract-2016-2687

DO - 10.1515/ract-2016-2687

M3 - Article

SN - 0033-8230

VL - 105

SP - 569

EP - 576

JO - Radiochimica Acta

JF - Radiochimica Acta

IS - 7

ER -