Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

Barbara Karches, Jonas Schön, Heiko Gerstenberg, Gabriele Hampel, Patricia Krenckel, Christian Plonka, Bernard Ponsard, Stephan Riepe, Christian Stieghorst, Norbert Wiehl

    Research outputpeer-review


    In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations
    Original languageEnglish
    Pages (from-to)569-576
    Number of pages8
    JournalRadiochimica Acta
    Issue number7
    StatePublished - 1 Oct 2017

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