Die direkte messung von stapelfehlerenergien

R. Siems, Pierre Delavignette, Severin Amelinckx

    Research outputpeer-review

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    Different methods for determining stacking fault energies from dislocation configurations observed in the electron microscope are discussed. Configurations discussed are simple, threefold, and fourfold ribbons, arrays of many parallel ribbons, and dislocation nodes. The latter are treated taking the mutual interaction of the partials approximately into account. Results are given for measurements in graphite, MoS2, AIN, and talc.
    Original languageEnglish
    PublisherSCK CEN
    Number of pages36
    StatePublished - Jul 1961

    Publication series

    NameSCK CEN Reports
    PublisherSCK CEN

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