Die direkte Messung von Stapelfehlerenergien

R. Siems; P. Delavignette; S. Amelinckx

doi:10.1007/BF01377814

Die direkte Messung von Stapelfehlerenergien

R. Siems, P. Delavignette, S. Amelinckx

Research output › peer-review

Abstract

Different methods for determining stacking fault energies from dislocation configurations observed in the electron microscope are discussed. Configurations discussed are simple, threefold, and fourfold ribbons, arrays of many parallel ribbons, and dislocation nodes. The latter are treated taking the mutual interaction of the partials approximately into account. Results are given for measurements in graphite, MoS₂, AlN, and talc.

Original language	German
Pages (from-to)	502-532
Number of pages	31
Journal	Zeitschrift für Physik
Volume	165
Issue number	5
DOIs	https://doi.org/10.1007/BF01377814
State	Published - Oct 1961

ASJC Scopus subject areas

Nuclear and High Energy Physics
General Physics and Astronomy

Access to Document

10.1007/BF01377814

Cite this

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title = "Die direkte Messung von Stapelfehlerenergien",

abstract = "Different methods for determining stacking fault energies from dislocation configurations observed in the electron microscope are discussed. Configurations discussed are simple, threefold, and fourfold ribbons, arrays of many parallel ribbons, and dislocation nodes. The latter are treated taking the mutual interaction of the partials approximately into account. Results are given for measurements in graphite, MoS2, AlN, and talc.",

author = "R. Siems and P. Delavignette and S. Amelinckx",

year = "1961",

month = oct,

doi = "10.1007/BF01377814",

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AU - Amelinckx, S.

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N2 - Different methods for determining stacking fault energies from dislocation configurations observed in the electron microscope are discussed. Configurations discussed are simple, threefold, and fourfold ribbons, arrays of many parallel ribbons, and dislocation nodes. The latter are treated taking the mutual interaction of the partials approximately into account. Results are given for measurements in graphite, MoS2, AlN, and talc.

AB - Different methods for determining stacking fault energies from dislocation configurations observed in the electron microscope are discussed. Configurations discussed are simple, threefold, and fourfold ribbons, arrays of many parallel ribbons, and dislocation nodes. The latter are treated taking the mutual interaction of the partials approximately into account. Results are given for measurements in graphite, MoS2, AlN, and talc.

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