Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma

Qi Xie, Jan Musschoot, Christophe Detavernier, Davy Deduytsche, Roland L. Van Meirhaeghe, Sven Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu

    Research outputpeer-review


    Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.
    Original languageEnglish
    Pages (from-to)2059-2063
    JournalMicroelectronic Engineering
    Issue number10
    StatePublished - Oct 2008
    Event12th European Workshop on Materials for Advanced Metallization - Dresden
    Duration: 2 Mar 20085 Mar 2008

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