Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma

Qi Xie; Jan Musschoot; Christophe Detavernier; Davy Deduytsche; Roland L. Van Meirhaeghe; Sven Van den Berghe; Yu-Long Jiang; Guo-Ping Ru; Bing-Zong Li; Xin-Ping Qu

doi:10.1016/j.mee.2008.05.026

Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma

Qi Xie, Jan Musschoot, Christophe Detavernier, Davy Deduytsche, Roland L. Van Meirhaeghe, Sven Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu

Research output › peer-review

Abstract

Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.

Original language	English
Pages (from-to)	2059-2063
Journal	Microelectronic Engineering
Volume	85
Issue number	10
DOIs	https://doi.org/10.1016/j.mee.2008.05.026
State	Published - Oct 2008
Event	12th European Workshop on Materials for Advanced Metallization - Dresden Duration: 2 Mar 2008 → 5 Mar 2008

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10.1016/j.mee.2008.05.026License: Other

Cite this

Xie, Q., Musschoot, J., Detavernier, C., Deduytsche, D., Van Meirhaeghe, R. L., Van den Berghe, S., Jiang, Y.-L., Ru, G.-P., Li, B.-Z., & Qu, X.-P. (2008). Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma. Microelectronic Engineering, 85(10), 2059-2063. https://doi.org/10.1016/j.mee.2008.05.026

@article{2e453afb09ea4cff99414ae2310b1db1,

title = "Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma",

abstract = "Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.",

keywords = "Atomic layer deposition, TaN, Diffusion barrier, Cu metallization",

author = "Qi Xie and Jan Musschoot and Christophe Detavernier and Davy Deduytsche and {Van Meirhaeghe}, {Roland L.} and {Van den Berghe}, Sven and Yu-Long Jiang and Guo-Ping Ru and Bing-Zong Li and Xin-Ping Qu",

note = "Score = 10; 12th European Workshop on Materials for Advanced Metallization ; Conference date: 02-03-2008 Through 05-03-2008",

year = "2008",

month = oct,

doi = "10.1016/j.mee.2008.05.026",

language = "English",

volume = "85",

pages = "2059--2063",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "10",

}

Xie, Q, Musschoot, J, Detavernier, C, Deduytsche, D, Van Meirhaeghe, RL, Van den Berghe, S, Jiang, Y-L, Ru, G-P, Li, B-Z & Qu, X-P 2008, 'Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma', Microelectronic Engineering, vol. 85, no. 10, pp. 2059-2063. https://doi.org/10.1016/j.mee.2008.05.026

TY - JOUR

T1 - Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma

AU - Xie, Qi

AU - Musschoot, Jan

AU - Detavernier, Christophe

AU - Deduytsche, Davy

AU - Van Meirhaeghe, Roland L.

AU - Van den Berghe, Sven

AU - Jiang, Yu-Long

AU - Ru, Guo-Ping

AU - Li, Bing-Zong

AU - Qu, Xin-Ping

N1 - Score = 10

PY - 2008/10

Y1 - 2008/10

N2 - Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.

AB - Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.

KW - Atomic layer deposition

KW - TaN

KW - Diffusion barrier

KW - Cu metallization

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_93620

UR - http://knowledgecentre.sckcen.be/so2/bibref/9361

U2 - 10.1016/j.mee.2008.05.026

DO - 10.1016/j.mee.2008.05.026

M3 - Article

SN - 0167-9317

VL - 85

SP - 2059

EP - 2063

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 10

T2 - 12th European Workshop on Materials for Advanced Metallization

Y2 - 2 March 2008 through 5 March 2008

ER -