Dislocations and stacking faults in aluminum nitride

P. Delavignette, H. B. Kirkpatrick, S. Amelinckx

    Research outputpeer-review

    Abstract

    Dislocations in thin platelets of aluminum nitride grown from the vapor phase appear to be of two types. Some are dissociated into partials of the Shockley type; others are undissociated. A model is given for both types. The stacking fault associated with the dissociated dislocations consists of one lamella of the sphalerite structure. The stacking fault energy is deduced from the width of the ribbons and from the shape of the extended nodes; its value is γ ≈ 4 ergs/cm2.

    Original languageEnglish
    Pages (from-to)1098-1100
    Number of pages3
    JournalJournal of Applied Physics
    Volume32
    Issue number6
    DOIs
    StatePublished - 1961

    ASJC Scopus subject areas

    • General Physics and Astronomy

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