Dislocations and wide stacking faults in wurtzite type crystals: Zinc sulfide and aluminium nitride

H. Blank; P. Delavignette; S. Amelinckx

doi:10.1002/pssb.19620021204

Dislocations and wide stacking faults in wurtzite type crystals: Zinc sulfide and aluminium nitride

H. Blank, P. Delavignette, S. Amelinckx

Research output › peer-review

Abstract

Vapour grown ZnS and AlN crystals of wurtzite structure are studied by transmission electron microscopy. The habit plane of the ZnS crystals is 〈1120〉 and that of AIN (0001). The stacking fault energy is negative in hexagonal ZnS and positive in AlN at 20 °C so that different patterns of dislocations and stacking faults are observed in the two wurtzite structures. In ZnS stacking faults in prism planes are found which show some uncommon properties.

Original language	English
Pages (from-to)	1660-1669
Number of pages	10
Journal	Physica Status Solidi (B)
Volume	2
Issue number	12
DOIs	https://doi.org/10.1002/pssb.19620021204
State	Published - 1962

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.19620021204

Cite this

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title = "Dislocations and wide stacking faults in wurtzite type crystals: Zinc sulfide and aluminium nitride",

abstract = "Vapour grown ZnS and AlN crystals of wurtzite structure are studied by transmission electron microscopy. The habit plane of the ZnS crystals is 〈1120〉 and that of AIN (0001). The stacking fault energy is negative in hexagonal ZnS and positive in AlN at 20 °C so that different patterns of dislocations and stacking faults are observed in the two wurtzite structures. In ZnS stacking faults in prism planes are found which show some uncommon properties.",

author = "H. Blank and P. Delavignette and S. Amelinckx",

year = "1962",

doi = "10.1002/pssb.19620021204",

language = "English",

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AU - Blank, H.

AU - Delavignette, P.

AU - Amelinckx, S.

PY - 1962

Y1 - 1962

N2 - Vapour grown ZnS and AlN crystals of wurtzite structure are studied by transmission electron microscopy. The habit plane of the ZnS crystals is 〈1120〉 and that of AIN (0001). The stacking fault energy is negative in hexagonal ZnS and positive in AlN at 20 °C so that different patterns of dislocations and stacking faults are observed in the two wurtzite structures. In ZnS stacking faults in prism planes are found which show some uncommon properties.

AB - Vapour grown ZnS and AlN crystals of wurtzite structure are studied by transmission electron microscopy. The habit plane of the ZnS crystals is 〈1120〉 and that of AIN (0001). The stacking fault energy is negative in hexagonal ZnS and positive in AlN at 20 °C so that different patterns of dislocations and stacking faults are observed in the two wurtzite structures. In ZnS stacking faults in prism planes are found which show some uncommon properties.

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