Effect of airgap deep trench isolation on the gamma behavior of a 0.13 μm SiGe:C NPN HBT technology

Sofie Put; Eddy Simoen; Stefaan Van Huylenbroeck; C. Claeys; Marco Van Uffelen; Paul Leroux

Effect of airgap deep trench isolation on the gamma behavior of a 0.13 μm SiGe:C NPN HBT technology

Sofie Put, Eddy Simoen, Stefaan Van Huylenbroeck, C. Claeys, Marco Van Uffelen, Paul Leroux

Research output › peer-review

Abstract

In-situ measurements during gamma radiation up to 100 kGy of 0.13μm SiGe NPNs featuring airgap deep trench isolation is compared with NPNs using junction isolation. The devices without this deep trench isolation show a higher degradation during irradiation as well in forward-mode as in reverse-mode operation. The deep trench isolation can prevent the migration of hydrogen towards the emitter-base oxide resulting in lower degradation. In forward-mode operation, the radiation-induced base current density increase shows a clear saturation with total dose. The onset of this saturation starts at 20 kGy. In reverse-mode operation no such saturation was observed. A different impact of radiation-induced donor and acceptor traps on the degradation of the base current density could account for this behavior.

Original language	English
Title of host publication	Proceedings of the 8th European Workshop on Radiation Effects on Components and Systems
Place of Publication	Finland
Pages	426-431
State	Published - Sep 2008
Event	RADECS - 2008: 8th European Workshop on Radiation and Its Effects on Components and Systems - Jyväskylä Duration: 10 Sep 2008 → 12 Sep 2008

Conference

Conference	RADECS - 2008
Country/Territory	Finland
City	Jyväskylä
Period	2008-09-10 → 2008-09-12

Cite this

@inproceedings{4ba78606dab34a39ad0c4c600512f246,

title = "Effect of airgap deep trench isolation on the gamma behavior of a 0.13 μm SiGe:C NPN HBT technology",

abstract = "In-situ measurements during gamma radiation up to 100 kGy of 0.13μm SiGe NPNs featuring airgap deep trench isolation is compared with NPNs using junction isolation. The devices without this deep trench isolation show a higher degradation during irradiation as well in forward-mode as in reverse-mode operation. The deep trench isolation can prevent the migration of hydrogen towards the emitter-base oxide resulting in lower degradation. In forward-mode operation, the radiation-induced base current density increase shows a clear saturation with total dose. The onset of this saturation starts at 20 kGy. In reverse-mode operation no such saturation was observed. A different impact of radiation-induced donor and acceptor traps on the degradation of the base current density could account for this behavior.",

keywords = "Deep trench isolation, High level gamma radiation, In-situ measurements, SiGe Heterojunction Bipolar Transistor",

author = "Sofie Put and Eddy Simoen and {Van Huylenbroeck}, Stefaan and C. Claeys and {Van Uffelen}, Marco and Paul Leroux",

note = "Score = 1; RADECS - 2008 : 8th European Workshop on Radiation and Its Effects on Components and Systems ; Conference date: 10-09-2008 Through 12-09-2008",

year = "2008",

month = sep,

language = "English",

pages = "426--431",

booktitle = "Proceedings of the 8th European Workshop on Radiation Effects on Components and Systems",

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TY - GEN

T1 - Effect of airgap deep trench isolation on the gamma behavior of a 0.13 μm SiGe:C NPN HBT technology

AU - Put, Sofie

AU - Simoen, Eddy

AU - Van Huylenbroeck, Stefaan

AU - Claeys, C.

AU - Van Uffelen, Marco

AU - Leroux, Paul

N1 - Score = 1

PY - 2008/9

Y1 - 2008/9

N2 - In-situ measurements during gamma radiation up to 100 kGy of 0.13μm SiGe NPNs featuring airgap deep trench isolation is compared with NPNs using junction isolation. The devices without this deep trench isolation show a higher degradation during irradiation as well in forward-mode as in reverse-mode operation. The deep trench isolation can prevent the migration of hydrogen towards the emitter-base oxide resulting in lower degradation. In forward-mode operation, the radiation-induced base current density increase shows a clear saturation with total dose. The onset of this saturation starts at 20 kGy. In reverse-mode operation no such saturation was observed. A different impact of radiation-induced donor and acceptor traps on the degradation of the base current density could account for this behavior.

AB - In-situ measurements during gamma radiation up to 100 kGy of 0.13μm SiGe NPNs featuring airgap deep trench isolation is compared with NPNs using junction isolation. The devices without this deep trench isolation show a higher degradation during irradiation as well in forward-mode as in reverse-mode operation. The deep trench isolation can prevent the migration of hydrogen towards the emitter-base oxide resulting in lower degradation. In forward-mode operation, the radiation-induced base current density increase shows a clear saturation with total dose. The onset of this saturation starts at 20 kGy. In reverse-mode operation no such saturation was observed. A different impact of radiation-induced donor and acceptor traps on the degradation of the base current density could account for this behavior.

KW - Deep trench isolation

KW - High level gamma radiation

KW - In-situ measurements

KW - SiGe Heterojunction Bipolar Transistor

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_97021

UR - http://knowledgecentre.sckcen.be/so2/bibref/5765

M3 - In-proceedings paper

SP - 426

EP - 431

BT - Proceedings of the 8th European Workshop on Radiation Effects on Components and Systems

CY - Finland

T2 - RADECS - 2008

Y2 - 10 September 2008 through 12 September 2008

ER -