Effect of airgap deep trench isolation on the gamma behavior of a 0.13 μm SiGe:C NPN HBT technology

Sofie Put, Eddy Simoen, Stefaan Van Huylenbroeck, C. Claeys, Marco Van Uffelen, Paul Leroux

    Research outputpeer-review


    In-situ measurements during gamma radiation up to 100 kGy of 0.13μm SiGe NPNs featuring airgap deep trench isolation is compared with NPNs using junction isolation. The devices without this deep trench isolation show a higher degradation during irradiation as well in forward-mode as in reverse-mode operation. The deep trench isolation can prevent the migration of hydrogen towards the emitter-base oxide resulting in lower degradation. In forward-mode operation, the radiation-induced base current density increase shows a clear saturation with total dose. The onset of this saturation starts at 20 kGy. In reverse-mode operation no such saturation was observed. A different impact of radiation-induced donor and acceptor traps on the degradation of the base current density could account for this behavior.
    Original languageEnglish
    Title of host publicationProceedings of the 8th European Workshop on Radiation Effects on Components and Systems
    Place of PublicationFinland
    StatePublished - Sep 2008
    EventRadecs 2008 - Jyväskylä
    Duration: 10 Sep 200812 Sep 2008


    ConferenceRadecs 2008

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