TY - JOUR
T1 - Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe:C NPN HBT Technology
AU - Put, Sofie
AU - Simoen, Eddy
AU - Van Huylenbroeck, Stefaan
AU - Claeys, Cor
AU - Van Uffelen, Marco
AU - Leroux, Paul
PY - 2009/8
Y1 - 2009/8
N2 - The effect of an airgap deep trench isolation on the gamma radiation behavior of a 0.13μm SiGe NPN HBT technology is studied with the help of in-situ measurements. The incorporation of this deep trench isolation in the technology leads to a lower degradation of the transistor during irradiation as well in forward-mode as in reverse-mode operation. A possible explanation is briefly mentioned.
AB - The effect of an airgap deep trench isolation on the gamma radiation behavior of a 0.13μm SiGe NPN HBT technology is studied with the help of in-situ measurements. The incorporation of this deep trench isolation in the technology leads to a lower degradation of the transistor during irradiation as well in forward-mode as in reverse-mode operation. A possible explanation is briefly mentioned.
KW - Deep trench isolation
KW - High level gamma radiation
KW - In-situ measurements
KW - SiGe Heterojunction Bipolar Transistor
UR - http://www.scopus.com/inward/record.url?scp=69549106142&partnerID=8YFLogxK
U2 - 10.1109/TNS.2009.2018277
DO - 10.1109/TNS.2009.2018277
M3 - Article
AN - SCOPUS:69549106142
SN - 0018-9499
VL - 56
SP - 2198
EP - 2204
JO - IEEE transactions on nuclear Science
JF - IEEE transactions on nuclear Science
IS - 4
M1 - 5204598
ER -