Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe:C NPN HBT Technology

Sofie Put, Eddy Simoen, Stefaan Van Huylenbroeck, Cor Claeys, Marco Van Uffelen, Paul Leroux

    Research outputpeer-review

    Abstract

    The effect of an airgap deep trench isolation on the gamma radiation behavior of a 0.13μm SiGe NPN HBT technology is studied with the help of in-situ measurements. The incorporation of this deep trench isolation in the technology leads to a lower degradation of the transistor during irradiation as well in forward-mode as in reverse-mode operation. A possible explanation is briefly mentioned.

    Original languageEnglish
    Article number5204598
    Pages (from-to)2198-2204
    Number of pages7
    JournalIEEE transactions on nuclear Science
    Volume56
    Issue number4
    DOIs
    StatePublished - Aug 2009

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Nuclear Energy and Engineering
    • Electrical and Electronic Engineering

    Cite this