Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe:C NPN HBT Technology

Sofie Put; Eddy Simoen; Stefaan Van Huylenbroeck; Cor Claeys; Marco Van Uffelen; Paul Leroux

doi:10.1109/TNS.2009.2018277

Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe:C NPN HBT Technology

Sofie Put
, Eddy Simoen
, Stefaan Van Huylenbroeck
, Cor Claeys
, Marco Van Uffelen
, Paul Leroux

Research output › peer-review

Abstract

The effect of an airgap deep trench isolation on the gamma radiation behavior of a 0.13μm SiGe NPN HBT technology is studied with the help of in-situ measurements. The incorporation of this deep trench isolation in the technology leads to a lower degradation of the transistor during irradiation as well in forward-mode as in reverse-mode operation. A possible explanation is briefly mentioned.

Original language	English
Article number	5204598
Pages (from-to)	2198-2204
Number of pages	7
Journal	IEEE transactions on nuclear Science
Volume	56
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2009.2018277
State	Published - Aug 2009

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2009.2018277License: Unspecified

Cite this

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title = "Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe:C NPN HBT Technology",

abstract = "The effect of an airgap deep trench isolation on the gamma radiation behavior of a 0.13μm SiGe NPN HBT technology is studied with the help of in-situ measurements. The incorporation of this deep trench isolation in the technology leads to a lower degradation of the transistor during irradiation as well in forward-mode as in reverse-mode operation. A possible explanation is briefly mentioned.",

keywords = "Deep trench isolation, High level gamma radiation, In-situ measurements, SiGe Heterojunction Bipolar Transistor",

author = "Sofie Put and Eddy Simoen and \{Van Huylenbroeck\}, Stefaan and Cor Claeys and \{Van Uffelen\}, Marco and Paul Leroux",

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AU - Claeys, Cor

AU - Van Uffelen, Marco

AU - Leroux, Paul

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AB - The effect of an airgap deep trench isolation on the gamma radiation behavior of a 0.13μm SiGe NPN HBT technology is studied with the help of in-situ measurements. The incorporation of this deep trench isolation in the technology leads to a lower degradation of the transistor during irradiation as well in forward-mode as in reverse-mode operation. A possible explanation is briefly mentioned.

KW - Deep trench isolation

KW - High level gamma radiation

KW - In-situ measurements

KW - SiGe Heterojunction Bipolar Transistor

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