@article{fb1dd044fa484d0bada549aefe027a10,
title = "Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs",
abstract = "In this work the influence of Selective Epitaxial Growth (SEG), high-k gate-dielectric and rotation of the channel on the low frequency (LF)-noise is investigated. The carrier number fluctuations dominate the 1/f noise for all the devices studied. An unusual effective trap density profile is found. It decays with a larger distance from the interface. This implies a higher trap density in the interfacial SiO2-layer, compared with the high-k dielectric. The shape of the profile is different for a HfSiON gate-dielectric compared with a HfO2 gate-dielectric. Higher trap densities are found for the latter. The Selective Epitaxial Growth (SEG) and channel orientation show only a negligible impact on the noise behavior when a HfSiON-dielectric is used.",
keywords = "45° rotated channel, Gate-dielectric, Low frequency noise, Selective epitaxial growth (SEG), SOI MuGFET",
author = "Sofie Put and Harsh Mehta and N. Collaert and {Van Uffelen}, Marco and P. Leroux and Corneel Claeys and N. Lukyanchikova and Eddy Simoen",
year = "2010",
month = feb,
doi = "10.1016/j.sse.2009.12.016",
language = "English",
volume = "54",
pages = "178--184",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Ltd",
number = "2",
}