Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

Sofie Put, Harsh Mehta, N. Collaert, Marco Van Uffelen, P. Leroux, Corneel Claeys, N. Lukyanchikova, Eddy Simoen

    Research outputpeer-review


    In this work the influence of Selective Epitaxial Growth (SEG), high-k gate-dielectric and rotation of the channel on the low frequency (LF)-noise is investigated. The carrier number fluctuations dominate the 1/f noise for all the devices studied. An unusual effective trap density profile is found. It decays with a larger distance from the interface. This implies a higher trap density in the interfacial SiO2-layer, compared with the high-k dielectric. The shape of the profile is different for a HfSiON gate-dielectric compared with a HfO2 gate-dielectric. Higher trap densities are found for the latter. The Selective Epitaxial Growth (SEG) and channel orientation show only a negligible impact on the noise behavior when a HfSiON-dielectric is used.

    Original languageEnglish
    Pages (from-to)178-184
    Number of pages7
    JournalSolid-State Electronics
    Issue number2
    StatePublished - Feb 2010


    FundersFunder number
    Euratom 7th Framework Programme216373

      ASJC Scopus subject areas

      • Electronic, Optical and Magnetic Materials
      • Condensed Matter Physics
      • Materials Chemistry
      • Electrical and Electronic Engineering

      Cite this