Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

Sofie Put; Harsh Mehta; N. Collaert; Marco Van Uffelen; P. Leroux; Corneel Claeys; N. Lukyanchikova; Eddy Simoen

doi:10.1016/j.sse.2009.12.016

Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

Sofie Put
, Harsh Mehta
, N. Collaert
, Marco Van Uffelen
, P. Leroux
, Corneel Claeys
, N. Lukyanchikova
, Eddy Simoen

Research output › peer-review

Abstract

In this work the influence of Selective Epitaxial Growth (SEG), high-k gate-dielectric and rotation of the channel on the low frequency (LF)-noise is investigated. The carrier number fluctuations dominate the 1/f noise for all the devices studied. An unusual effective trap density profile is found. It decays with a larger distance from the interface. This implies a higher trap density in the interfacial SiO₂-layer, compared with the high-k dielectric. The shape of the profile is different for a HfSiON gate-dielectric compared with a HfO₂ gate-dielectric. Higher trap densities are found for the latter. The Selective Epitaxial Growth (SEG) and channel orientation show only a negligible impact on the noise behavior when a HfSiON-dielectric is used.

Original language	English
Pages (from-to)	178-184
Number of pages	7
Journal	Solid-State Electronics
Volume	54
Issue number	2
DOIs	https://doi.org/10.1016/j.sse.2009.12.016
State	Published - Feb 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2009.12.016License: Unspecified

Cite this

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title = "Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs",

abstract = "In this work the influence of Selective Epitaxial Growth (SEG), high-k gate-dielectric and rotation of the channel on the low frequency (LF)-noise is investigated. The carrier number fluctuations dominate the 1/f noise for all the devices studied. An unusual effective trap density profile is found. It decays with a larger distance from the interface. This implies a higher trap density in the interfacial SiO2-layer, compared with the high-k dielectric. The shape of the profile is different for a HfSiON gate-dielectric compared with a HfO2 gate-dielectric. Higher trap densities are found for the latter. The Selective Epitaxial Growth (SEG) and channel orientation show only a negligible impact on the noise behavior when a HfSiON-dielectric is used.",

keywords = "45° rotated channel, Gate-dielectric, Low frequency noise, Selective epitaxial growth (SEG), SOI MuGFET",

author = "Sofie Put and Harsh Mehta and N. Collaert and \{Van Uffelen\}, Marco and P. Leroux and Corneel Claeys and N. Lukyanchikova and Eddy Simoen",

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language = "English",

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T1 - Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

AU - Put, Sofie

AU - Mehta, Harsh

AU - Collaert, N.

AU - Van Uffelen, Marco

AU - Leroux, P.

AU - Claeys, Corneel

AU - Lukyanchikova, N.

AU - Simoen, Eddy

PY - 2010/2

Y1 - 2010/2

N2 - In this work the influence of Selective Epitaxial Growth (SEG), high-k gate-dielectric and rotation of the channel on the low frequency (LF)-noise is investigated. The carrier number fluctuations dominate the 1/f noise for all the devices studied. An unusual effective trap density profile is found. It decays with a larger distance from the interface. This implies a higher trap density in the interfacial SiO2-layer, compared with the high-k dielectric. The shape of the profile is different for a HfSiON gate-dielectric compared with a HfO2 gate-dielectric. Higher trap densities are found for the latter. The Selective Epitaxial Growth (SEG) and channel orientation show only a negligible impact on the noise behavior when a HfSiON-dielectric is used.

AB - In this work the influence of Selective Epitaxial Growth (SEG), high-k gate-dielectric and rotation of the channel on the low frequency (LF)-noise is investigated. The carrier number fluctuations dominate the 1/f noise for all the devices studied. An unusual effective trap density profile is found. It decays with a larger distance from the interface. This implies a higher trap density in the interfacial SiO2-layer, compared with the high-k dielectric. The shape of the profile is different for a HfSiON gate-dielectric compared with a HfO2 gate-dielectric. Higher trap densities are found for the latter. The Selective Epitaxial Growth (SEG) and channel orientation show only a negligible impact on the noise behavior when a HfSiON-dielectric is used.

KW - 45° rotated channel

KW - Gate-dielectric

KW - Low frequency noise

KW - Selective epitaxial growth (SEG)

KW - SOI MuGFET

UR - https://www.scopus.com/pages/publications/76349122927

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DO - 10.1016/j.sse.2009.12.016

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