Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Shaoren Deng; Qi Xie; Davy Deduytsche; Marc Schaekers; Dennis Lin; Matty Caymax; Annelies Delabie; Sven Van den Berghe; Xin-Ping Qu; C. Detavernier

doi:10.1063/1.3622649

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Shaoren Deng, Qi Xie, Davy Deduytsche, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Sven Van den Berghe, Xin-Ping Qu, C. Detavernier

Research output › peer-review

Abstract

Metal-oxide-semiconductor capacitor was fabricated using in situ O2 plasma passivation and subsequent deposition of a HfO2 high-k gate stack on Ge. By extracting flat band voltages from capacitors with different equivalent oxide thicknesses (EOT), the effect of forming gas annealing (FGA) and O2 ambient annealing on the fixed charge was systematically investigated. The O2 ambient annealing is more effective than FGA as it reduced fixed charge density to 8.3 × 1011 cm−2 compared to 4.5 × 1012 cm−2 for at the same thermal budget and showed no degradation of EOT. Further, the distribution of fixed charges in gate stack was discussed in detail.
The research leading to these results has received funding from the European Research Council under the European Union’s Seventh Framework Programme (FP7/2007-2013)/ERC Grant Agreement No. 239865.

Original language	English
Article number	052906
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letter
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.3622649
State	Published - 3 Aug 2011

Access to Document

10.1063/1.3622649License: Unspecified

Cite this

@article{e4f9d7e55b4e406f8457cca6d0f5dce3,

title = "Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices",

abstract = "Metal-oxide-semiconductor capacitor was fabricated using in situ O2 plasma passivation and subsequent deposition of a HfO2 high-k gate stack on Ge. By extracting flat band voltages from capacitors with different equivalent oxide thicknesses (EOT), the effect of forming gas annealing (FGA) and O2 ambient annealing on the fixed charge was systematically investigated. The O2 ambient annealing is more effective than FGA as it reduced fixed charge density to 8.3 × 1011 cm−2 compared to 4.5 × 1012 cm−2 for at the same thermal budget and showed no degradation of EOT. Further, the distribution of fixed charges in gate stack was discussed in detail.The research leading to these results has received funding from the European Research Council under the European Union{\textquoteright}s Seventh Framework Programme (FP7/2007-2013)/ERC Grant Agreement No. 239865.",

keywords = "Atomic layer deposition, Passivation, Dielectric properties, Annealing, MOS devices, Electrical equipment",

author = "Shaoren Deng and Qi Xie and Davy Deduytsche and Marc Schaekers and Dennis Lin and Matty Caymax and Annelies Delabie and {Van den Berghe}, Sven and Xin-Ping Qu and C. Detavernier",

year = "2011",

month = aug,

day = "3",

doi = "10.1063/1.3622649",

language = "English",

volume = "99",

pages = "1--3",

journal = "Applied Physics Letter",

issn = "0003-6951",

publisher = "AIP - American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

AU - Deng, Shaoren

AU - Xie, Qi

AU - Deduytsche, Davy

AU - Schaekers, Marc

AU - Lin, Dennis

AU - Caymax, Matty

AU - Delabie, Annelies

AU - Van den Berghe, Sven

AU - Qu, Xin-Ping

AU - Detavernier, C.

PY - 2011/8/3

Y1 - 2011/8/3

N2 - Metal-oxide-semiconductor capacitor was fabricated using in situ O2 plasma passivation and subsequent deposition of a HfO2 high-k gate stack on Ge. By extracting flat band voltages from capacitors with different equivalent oxide thicknesses (EOT), the effect of forming gas annealing (FGA) and O2 ambient annealing on the fixed charge was systematically investigated. The O2 ambient annealing is more effective than FGA as it reduced fixed charge density to 8.3 × 1011 cm−2 compared to 4.5 × 1012 cm−2 for at the same thermal budget and showed no degradation of EOT. Further, the distribution of fixed charges in gate stack was discussed in detail.The research leading to these results has received funding from the European Research Council under the European Union’s Seventh Framework Programme (FP7/2007-2013)/ERC Grant Agreement No. 239865.

AB - Metal-oxide-semiconductor capacitor was fabricated using in situ O2 plasma passivation and subsequent deposition of a HfO2 high-k gate stack on Ge. By extracting flat band voltages from capacitors with different equivalent oxide thicknesses (EOT), the effect of forming gas annealing (FGA) and O2 ambient annealing on the fixed charge was systematically investigated. The O2 ambient annealing is more effective than FGA as it reduced fixed charge density to 8.3 × 1011 cm−2 compared to 4.5 × 1012 cm−2 for at the same thermal budget and showed no degradation of EOT. Further, the distribution of fixed charges in gate stack was discussed in detail.The research leading to these results has received funding from the European Research Council under the European Union’s Seventh Framework Programme (FP7/2007-2013)/ERC Grant Agreement No. 239865.

KW - Atomic layer deposition

KW - Passivation

KW - Dielectric properties

KW - Annealing

KW - MOS devices

KW - Electrical equipment

UR - https://ecm.sckcen.be/OTCS/llisapi.dll/overview/39155523

U2 - 10.1063/1.3622649

DO - 10.1063/1.3622649

M3 - Article

SN - 0003-6951

VL - 99

SP - 1

EP - 3

JO - Applied Physics Letter

JF - Applied Physics Letter

IS - 5

M1 - 052906

ER -