Abstract
In this work we present a study on teh Super Luminescent LIght Emitting Diodes (SLEDs) performance under high doses of gamma radiation. We investigate GaAs SLEDs with emission wavelengths around 830 nm. The devices were exposed to ionising radiation at a dose rate of about 4.7 Gy/s, up to a cumulated dose of 10.1 MGy in the CMF facility of the Belgian nuclear research centre SCK•CEN. We measured the device characteristics before adn after irradiation. We show that the SLED performance is only marginally affected.
Original language | English |
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Title of host publication | SPIE Proceedings : International Conference on Space Optics 2006, Noordwijk, Netherlands |
Pages | 1-3 |
Number of pages | 3 |
Volume | 10567 |
DOIs | |
State | Published - 27 Jun 2016 |
Event | 2006 International Conference on Space Optics - ESTEC, Noordwijk Duration: 27 Jun 2006 → 30 Jun 2006 |
Conference
Conference | 2006 International Conference on Space Optics |
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Abbreviated title | ISCO 2006 |
Country/Territory | Netherlands |
City | Noordwijk |
Period | 2006-06-27 → 2006-06-30 |