Electrical properties of non-stoichiometric amorphous CdGeAs2.

Electrical properties of non-stoichiometric amorphous CdGeAs₂.

P. Nagels

Research output › peer-review

Original language	English
Title of host publication	International Conference on the Physics of Semiconductors
Subtitle of host publication	Proceedings of the 17th International Conference on the Physics of Semiconductors: San Francisco, California, USA August 6–10, 1984
Publisher	Springer Verlag
Pages	837-840
Number of pages	4
ISBN (Print)	0387961089, 9780387961088
DOIs	https://doi.org/10.1007/978-1-4615-7682-2_186
State	Published - 1985
Externally published	Yes

@inproceedings{3b4ba9c0087b448fbc14622aead85d0b,

title = "Electrical properties of non-stoichiometric amorphous CdGeAs2.",

author = "P. Nagels",

year = "1985",

doi = "10.1007/978-1-4615-7682-2_186",

language = "English",

isbn = "0387961089",

publisher = "Springer Verlag",

pages = "837--840",

booktitle = "International Conference on the Physics of Semiconductors",

address = "Germany",

}

TY - GEN

T1 - Electrical properties of non-stoichiometric amorphous CdGeAs2.

AU - Nagels, P.

PY - 1985

Y1 - 1985

UR - http://www.scopus.com/inward/record.url?scp=0022216728&partnerID=8YFLogxK

U2 - 10.1007/978-1-4615-7682-2_186

DO - 10.1007/978-1-4615-7682-2_186

M3 - In-proceedings paper

AN - SCOPUS:0022216728

SN - 0387961089

SN - 9780387961088

SP - 837

EP - 840

BT - International Conference on the Physics of Semiconductors

PB - Springer Verlag

ER -