Electron effective mass determination from intraband Faraday-rotation in silicon

G. Ruymbeek; W. Grevendonk; P. Nagels

doi:10.1016/0378-4363(77)90043-2

Electron effective mass determination from intraband Faraday-rotation in silicon

G. Ruymbeek, W. Grevendonk, P. Nagels

Research output › peer-review

Abstract

Infrared Faraday-rotation of n-type silicon at room temperature was measured by a double-beam technique for four doping levels. Free-carrier concentration was determined by means of Hall-effect measurements. For several reasons, a Hall-factor r = 1 was assumed. Differences in effective masses, obtained for different crystals, cannot fully be explained by measurement errors. The impurity concentration gradient along the radius of the crystal must be invoked.

Original language	English
Pages (from-to)	14-17
Number of pages	4
Journal	Physica B+C
Volume	89
Issue number	C
DOIs	https://doi.org/10.1016/0378-4363(77)90043-2
State	Published - Apr 1977

Funding

Funders	Funder number
Fonds Wetenschappelijk Onderzoek

ASJC Scopus subject areas

General Engineering

Access to Document

10.1016/0378-4363(77)90043-2

Cite this

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title = "Electron effective mass determination from intraband Faraday-rotation in silicon",

abstract = "Infrared Faraday-rotation of n-type silicon at room temperature was measured by a double-beam technique for four doping levels. Free-carrier concentration was determined by means of Hall-effect measurements. For several reasons, a Hall-factor r = 1 was assumed. Differences in effective masses, obtained for different crystals, cannot fully be explained by measurement errors. The impurity concentration gradient along the radius of the crystal must be invoked.",

author = "G. Ruymbeek and W. Grevendonk and P. Nagels",

year = "1977",

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AU - Grevendonk, W.

AU - Nagels, P.

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N2 - Infrared Faraday-rotation of n-type silicon at room temperature was measured by a double-beam technique for four doping levels. Free-carrier concentration was determined by means of Hall-effect measurements. For several reasons, a Hall-factor r = 1 was assumed. Differences in effective masses, obtained for different crystals, cannot fully be explained by measurement errors. The impurity concentration gradient along the radius of the crystal must be invoked.

AB - Infrared Faraday-rotation of n-type silicon at room temperature was measured by a double-beam technique for four doping levels. Free-carrier concentration was determined by means of Hall-effect measurements. For several reasons, a Hall-factor r = 1 was assumed. Differences in effective masses, obtained for different crystals, cannot fully be explained by measurement errors. The impurity concentration gradient along the radius of the crystal must be invoked.

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