Electronic transport in amorphous CdAs2

P. Nagels, R. Colson, L. Van Gool

    Research outputpeer-review

    Abstract

    D.c. conductivity σ and thermopower S measurements have been carried out on a-CdAs2 as a function of temperature. The a.c. conductivity σ(ω) has also been investigated between 5-500 KHz and at temperatures down to 90 K. Below 320 K conduction is due to holes hopping between localized states in the band tail. At higher temperatures transport in extended states takes over. However, in order to explain a more rapid decrease of the thermopower than that expected for unipolar transport by holes, an electron contribution has to be taken into account. Below about 180 K the a.c. conductivity obeys the law σ(ω) ∞ ωS with s ≅ 1.1. This indicates that variable-range hopping in localized states at the Fermi level is the dominating process between 90-180 K.

    Original languageEnglish
    Pages (from-to)427
    Number of pages1
    JournalJournal of Non-Crystalline Solids
    Volume35-36
    Issue numberPART 1
    DOIs
    StatePublished - 1980

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this