First Characterization of Novel Silicon Carbide Detectors with Ultra-High Dose Rate Electron Beams for FLASH Radiotherapy

Francesco Romano, Giuliana Milluzzo, Fabio Di Martino, Maria Cristina D’Oca, Giuseppe Felici, Federica Galante, Alessia Gasparini, Giulia Mariani, Maurizio Marrale, Elisabetta Medina, Matteo Pacitti, Enrico Sangregorio, Verdi Vanreusel, Dirk Verellen, Anna Vignati, Massimo Camarda

Research outputpeer-review


Ultra-high dose rate (UHDR) beams for FLASH radiotherapy present significant dosimetric challenges. Although novel approaches for decreasing or correcting ion recombination in ionization chambers are being proposed, applicability of ionimetric dosimetry to UHDR beams is still under investigation. Solid-state sensors have been recently investigated as a valuable alternative for real-time measurements, especially for relative dosimetry and beam monitoring. Among them, Silicon Carbide (SiC) represents a very promising candidate, compromising between the maturity of Silicon and the robustness of diamond. Its features allow for large area sensors and high electric fields, required to avoid ion recombination in UHDR beams. In this study, we present simulations and experimental measurements with the low energy UHDR electron beams accelerated with the ElectronFLASH machine developed by the SIT Sordina company (IT). The response of a newly developed 1 × 1 cm 2 SiC sensor in charge as a function of the dose-per-pulse and its radiation hardness up to a total delivered dose of 90 kGy, was investigated during a dedicated experimental campaign, which is, to our knowledge, the first characterization ever done of SiC with UHDR-pulsed beams accelerated by a dedicated ElectronFLASH LINAC. Results are encouraging and show a linear response of the SiC detector up to 2 Gy/pulse and a variation in the charge per pulse measured for a cumulative delivered dose of 90 kGy, within ±0.75%.

Original languageEnglish
Article number2986
Number of pages12
JournalApplied Sciences (Switzerland)
Issue number5
StatePublished - Mar 2023

ASJC Scopus subject areas

  • General Engineering
  • Instrumentation
  • General Materials Science
  • Fluid Flow and Transfer Processes
  • Process Chemistry and Technology
  • Computer Science Applications

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