Abstract
The proton irradiation effects on n-MuGFET devices
with three different geometries (single fin, wide fin and multiple
fin) are studied. Also, the effect of tensile strain in the fin on the
radiation behavior is investigated.
A fundamental difference in the radiation behavior between the
non-strained and the strained devices is found. The degradation of
the strained devices is most affected by the mobility decrease of the
backside transistor. The non-strained devices show a much lesser
back gate mobility degradation. For these devices the creation of
positive oxide traps is dominant. This shifts the onset of the back
channel to lower gate voltages, inducing a transconductance increase
at intermediate gate voltages. This effect is less pronounced
for single fin MuGFETs. At higher gate voltage, the transconductance
decreases for the strained and increases for the non-strained
transistors.
Original language | English |
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Pages (from-to) | 2227-2232 |
Journal | IEEE transactions on nuclear Science |
Volume | 54 |
Issue number | 6 |
DOIs | |
State | Published - Dec 2007 |