Hall effect in Li-doped MnO

P. Nagels; M. Denayer

doi:10.1016/0038-1098(67)90517-0

Hall effect in Li-doped MnO

P. Nagels, M. Denayer

Research output › peer-review

Abstract

Resistivity measurements were carried out on Li_0.001Mn_0.999O single crystals in the temperature range from 20° to 800°C. A break in the resistivity curves appears around 550°C. Below this temperature the activation energy for conduction is 0.37 eV. Hall effect measurements were also performed between 150° and 550°C. The temperature dependence of the Hall coefficient indicates a strong rise of the charge carrier concentration when temperature is raised. The Hall mobility of holes is extremely small (μ_H=5.5×10^-3cm²V^-1 s^-1 at 150°C); μ_H increases slightly from 150° to 250°C but remain constant at higher temperatures.

Original language	English
Pages (from-to)	193-197
Number of pages	5
Journal	Solid State Communications
Volume	5
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(67)90517-0
State	Published - Mar 1967

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(67)90517-0

Cite this

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title = "Hall effect in Li-doped MnO",

abstract = "Resistivity measurements were carried out on Li0.001Mn0.999O single crystals in the temperature range from 20° to 800°C. A break in the resistivity curves appears around 550°C. Below this temperature the activation energy for conduction is 0.37 eV. Hall effect measurements were also performed between 150° and 550°C. The temperature dependence of the Hall coefficient indicates a strong rise of the charge carrier concentration when temperature is raised. The Hall mobility of holes is extremely small (μH=5.5×10-3cm2V-1 s-1 at 150°C); μH increases slightly from 150° to 250°C but remain constant at higher temperatures.",

author = "P. Nagels and M. Denayer",

year = "1967",

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journal = "Solid State Communications",

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AU - Nagels, P.

AU - Denayer, M.

PY - 1967/3

Y1 - 1967/3

N2 - Resistivity measurements were carried out on Li0.001Mn0.999O single crystals in the temperature range from 20° to 800°C. A break in the resistivity curves appears around 550°C. Below this temperature the activation energy for conduction is 0.37 eV. Hall effect measurements were also performed between 150° and 550°C. The temperature dependence of the Hall coefficient indicates a strong rise of the charge carrier concentration when temperature is raised. The Hall mobility of holes is extremely small (μH=5.5×10-3cm2V-1 s-1 at 150°C); μH increases slightly from 150° to 250°C but remain constant at higher temperatures.

AB - Resistivity measurements were carried out on Li0.001Mn0.999O single crystals in the temperature range from 20° to 800°C. A break in the resistivity curves appears around 550°C. Below this temperature the activation energy for conduction is 0.37 eV. Hall effect measurements were also performed between 150° and 550°C. The temperature dependence of the Hall coefficient indicates a strong rise of the charge carrier concentration when temperature is raised. The Hall mobility of holes is extremely small (μH=5.5×10-3cm2V-1 s-1 at 150°C); μH increases slightly from 150° to 250°C but remain constant at higher temperatures.

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DO - 10.1016/0038-1098(67)90517-0

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JO - Solid State Communications

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