High resolution structure imaging and image simulation of stacking fault tetrahedra in ion-implanted silicon

Wim M.J. Coene; H. Bender; S. Amelinckx

doi:10.1080/01418618508237632

High resolution structure imaging and image simulation of stacking fault tetrahedra in ion-implanted silicon

Wim M.J. Coene, H. Bender, S. Amelinckx

Research output › peer-review

Abstract

An investigation of the stacking fault tetrahedra in ion-implanted and thermally annealed silicon, observed by means of high resolution electron microscopy and computer simulation, shows that an unambiguous distinction can be made between vacancy- and interstitial-type stacking fault tetrahedra by examining the sense of shift of the rows of bright dots in the high resolution images. In this way the observed defects are identified as vacancy-type stacking fault tetrahedra. The methods for estimating the stacking fault energy from the size distribution of the defects are commented on and applied to the present observation.

Original language	English
Pages (from-to)	369-381
Number of pages	13
Journal	Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume	52
Issue number	3
DOIs	https://doi.org/10.1080/01418618508237632
State	Published - Sep 1985

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Materials Science
Condensed Matter Physics
Physics and Astronomy (miscellaneous)
Metals and Alloys

Access to Document

10.1080/01418618508237632

Cite this

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abstract = "An investigation of the stacking fault tetrahedra in ion-implanted and thermally annealed silicon, observed by means of high resolution electron microscopy and computer simulation, shows that an unambiguous distinction can be made between vacancy- and interstitial-type stacking fault tetrahedra by examining the sense of shift of the rows of bright dots in the high resolution images. In this way the observed defects are identified as vacancy-type stacking fault tetrahedra. The methods for estimating the stacking fault energy from the size distribution of the defects are commented on and applied to the present observation.",

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AB - An investigation of the stacking fault tetrahedra in ion-implanted and thermally annealed silicon, observed by means of high resolution electron microscopy and computer simulation, shows that an unambiguous distinction can be made between vacancy- and interstitial-type stacking fault tetrahedra by examining the sense of shift of the rows of bright dots in the high resolution images. In this way the observed defects are identified as vacancy-type stacking fault tetrahedra. The methods for estimating the stacking fault energy from the size distribution of the defects are commented on and applied to the present observation.

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