HREM investigation of twinning in very high dose phosphorus ion-implanted silicon

Hugo M. Bender; Ann E.M. De Veirman; J. Van Landuyt; S. Amelinckx

doi:10.1007/BF00616823

HREM investigation of twinning in very high dose phosphorus ion-implanted silicon

Hugo M. Bender, Ann E.M. De Veirman, J. Van Landuyt, S. Amelinckx

Research output › peer-review

Abstract

Results are discussed of a study by means of high-resolution electron microscopy (HREM), electron diffraction, optical diffraction and image simulation of twinning in very high dose phosphorus ion-implanted (011) silicon wafers. Except for twins on the (111) planes (i. e., Σ3 boundaries) and Σ9 boundaries, also regions showing, in the high-resolution image, a threefold periodicity are frequently observed. It is demonstrated that the diffraction pattern and the image of such regions can be explained by the overlap of twinned grains. Interpretation by the presence of polytypes of silicon is excluded. The possibility to image twins on inclined (111) planes is discussed.

Original language	English
Pages (from-to)	83-90
Number of pages	8
Journal	Applied Physics A Solids and Surfaces
Volume	39
Issue number	2
DOIs	https://doi.org/10.1007/BF00616823
State	Published - Feb 1986

ASJC Scopus subject areas

General Materials Science
General Engineering
Physics and Astronomy (miscellaneous)

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10.1007/BF00616823

Cite this

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title = "HREM investigation of twinning in very high dose phosphorus ion-implanted silicon",

abstract = "Results are discussed of a study by means of high-resolution electron microscopy (HREM), electron diffraction, optical diffraction and image simulation of twinning in very high dose phosphorus ion-implanted (011) silicon wafers. Except for twins on the (111) planes (i. e., Σ3 boundaries) and Σ9 boundaries, also regions showing, in the high-resolution image, a threefold periodicity are frequently observed. It is demonstrated that the diffraction pattern and the image of such regions can be explained by the overlap of twinned grains. Interpretation by the presence of polytypes of silicon is excluded. The possibility to image twins on inclined (111) planes is discussed.",

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AU - Bender, Hugo M.

AU - De Veirman, Ann E.M.

AU - Van Landuyt, J.

AU - Amelinckx, S.

PY - 1986/2

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N2 - Results are discussed of a study by means of high-resolution electron microscopy (HREM), electron diffraction, optical diffraction and image simulation of twinning in very high dose phosphorus ion-implanted (011) silicon wafers. Except for twins on the (111) planes (i. e., Σ3 boundaries) and Σ9 boundaries, also regions showing, in the high-resolution image, a threefold periodicity are frequently observed. It is demonstrated that the diffraction pattern and the image of such regions can be explained by the overlap of twinned grains. Interpretation by the presence of polytypes of silicon is excluded. The possibility to image twins on inclined (111) planes is discussed.

AB - Results are discussed of a study by means of high-resolution electron microscopy (HREM), electron diffraction, optical diffraction and image simulation of twinning in very high dose phosphorus ion-implanted (011) silicon wafers. Except for twins on the (111) planes (i. e., Σ3 boundaries) and Σ9 boundaries, also regions showing, in the high-resolution image, a threefold periodicity are frequently observed. It is demonstrated that the diffraction pattern and the image of such regions can be explained by the overlap of twinned grains. Interpretation by the presence of polytypes of silicon is excluded. The possibility to image twins on inclined (111) planes is discussed.

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