Impact of radiation on the operation and reliability of deep submicron CMOS technologies

C. Claeys; S. Put; A. Griffoni; A. Cester; S. Gerardin; G. Meneghesso; A. Paccagnella; E. Simoen

doi:10.1149/1.3360593

Impact of radiation on the operation and reliability of deep submicron CMOS technologies

C. Claeys, S. Put, A. Griffoni, A. Cester, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen

Research output › peer-review

2 Scopus citations

Abstract

CMOS scaling has a beneficial impact on the radiation hardness of the technologies and often only requires a further optimization of either the Shallow Trench Isolation (STI) or the Buried Oxide (BOX) in case of a SOI technology. From a reliability viewpoint, heavy-ion induced ionization damage in the gate dielectric may lead to Radiation-Induced Leakage Current (RILC), Radiation-induced Soft Breakdown (RSB), Single Event Gate Rupture (SEGR) or the creation of latent damage. This paper discusses the present knowledge of the radiation impact on the operation and the reliability of deep submicron CMOS technologies.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2010, CSTIC 2010
Publisher	ECS - The Electrochemical Society
Pages	39-46
Number of pages	8
Volume	27
Edition	1
ISBN (Electronic)	9781607681564
ISBN (Print)	9781607682639
DOIs	https://doi.org/10.1149/1.3360593
State	Published - 2010
Event	China Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai Duration: 18 Mar 2010 → 19 Mar 2010

Publication series

Name	ECS Transactions
Number	1
Volume	27
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	China Semiconductor Technology International Conference 2010, CSTIC 2010
Country/Territory	China
City	Shanghai
Period	2010-03-18 → 2010-03-19

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.3360593

Cite this

Claeys, C., Put, S., Griffoni, A., Cester, A., Gerardin, S., Meneghesso, G., Paccagnella, A., & Simoen, E. (2010). Impact of radiation on the operation and reliability of deep submicron CMOS technologies. In China Semiconductor Technology International Conference 2010, CSTIC 2010 (1 ed., Vol. 27, pp. 39-46). (ECS Transactions; Vol. 27, No. 1). ECS - The Electrochemical Society. https://doi.org/10.1149/1.3360593

@inproceedings{30f955e793d1473b82e3f351dfb3d059,

title = "Impact of radiation on the operation and reliability of deep submicron CMOS technologies",

abstract = "CMOS scaling has a beneficial impact on the radiation hardness of the technologies and often only requires a further optimization of either the Shallow Trench Isolation (STI) or the Buried Oxide (BOX) in case of a SOI technology. From a reliability viewpoint, heavy-ion induced ionization damage in the gate dielectric may lead to Radiation-Induced Leakage Current (RILC), Radiation-induced Soft Breakdown (RSB), Single Event Gate Rupture (SEGR) or the creation of latent damage. This paper discusses the present knowledge of the radiation impact on the operation and the reliability of deep submicron CMOS technologies.",

keywords = "Gate dielectrics, Heavy ions, Radiation hardening, Reliability, Silicon on insulator technology",

author = "C. Claeys and S. Put and A. Griffoni and A. Cester and S. Gerardin and G. Meneghesso and A. Paccagnella and E. Simoen",

year = "2010",

doi = "10.1149/1.3360593",

language = "English",

isbn = "9781607682639",

volume = "27",

series = "ECS Transactions",

publisher = "ECS - The Electrochemical Society",

number = "1",

pages = "39--46",

booktitle = "China Semiconductor Technology International Conference 2010, CSTIC 2010",

edition = "1",

note = "China Semiconductor Technology International Conference 2010, CSTIC 2010 ; Conference date: 18-03-2010 Through 19-03-2010",

}

Claeys, C, Put, S, Griffoni, A, Cester, A, Gerardin, S, Meneghesso, G, Paccagnella, A & Simoen, E 2010, Impact of radiation on the operation and reliability of deep submicron CMOS technologies. in China Semiconductor Technology International Conference 2010, CSTIC 2010. 1 edn, vol. 27, ECS Transactions, no. 1, vol. 27, ECS - The Electrochemical Society, pp. 39-46, China Semiconductor Technology International Conference 2010, CSTIC 2010, Shanghai, China, 2010-03-18. https://doi.org/10.1149/1.3360593

TY - GEN

T1 - Impact of radiation on the operation and reliability of deep submicron CMOS technologies

AU - Claeys, C.

AU - Put, S.

AU - Griffoni, A.

AU - Cester, A.

AU - Gerardin, S.

AU - Meneghesso, G.

AU - Paccagnella, A.

AU - Simoen, E.

PY - 2010

Y1 - 2010

N2 - CMOS scaling has a beneficial impact on the radiation hardness of the technologies and often only requires a further optimization of either the Shallow Trench Isolation (STI) or the Buried Oxide (BOX) in case of a SOI technology. From a reliability viewpoint, heavy-ion induced ionization damage in the gate dielectric may lead to Radiation-Induced Leakage Current (RILC), Radiation-induced Soft Breakdown (RSB), Single Event Gate Rupture (SEGR) or the creation of latent damage. This paper discusses the present knowledge of the radiation impact on the operation and the reliability of deep submicron CMOS technologies.

AB - CMOS scaling has a beneficial impact on the radiation hardness of the technologies and often only requires a further optimization of either the Shallow Trench Isolation (STI) or the Buried Oxide (BOX) in case of a SOI technology. From a reliability viewpoint, heavy-ion induced ionization damage in the gate dielectric may lead to Radiation-Induced Leakage Current (RILC), Radiation-induced Soft Breakdown (RSB), Single Event Gate Rupture (SEGR) or the creation of latent damage. This paper discusses the present knowledge of the radiation impact on the operation and the reliability of deep submicron CMOS technologies.

KW - Gate dielectrics

KW - Heavy ions

KW - Radiation hardening

KW - Reliability

KW - Silicon on insulator technology

UR - http://www.scopus.com/inward/record.url?scp=84857383183&partnerID=8YFLogxK

U2 - 10.1149/1.3360593

DO - 10.1149/1.3360593

M3 - In-proceedings paper

AN - SCOPUS:84857383183

SN - 9781607682639

VL - 27

T3 - ECS Transactions

SP - 39

EP - 46

BT - China Semiconductor Technology International Conference 2010, CSTIC 2010

PB - ECS - The Electrochemical Society

T2 - China Semiconductor Technology International Conference 2010, CSTIC 2010

Y2 - 18 March 2010 through 19 March 2010

ER -