Abstract
The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.
Original language | English |
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Title of host publication | Safe 2007 |
Place of Publication | Utrecht, Netherlands |
State | Published - Nov 2007 |
Event | Safe 2007 - STW, Veldhoven Duration: 29 Nov 2007 → 29 Nov 2007 |
Conference
Conference | Safe 2007 |
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Country/Territory | Netherlands |
City | Veldhoven |
Period | 2007-11-29 → 2007-11-29 |