In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

Sofie Put, Eddy Simoen, Stefaan Vanhuylenbroeck, Cor Claeys, Marco Van Uffelen, Paul Leroux, Francis Berghmans

    Research outputpeer-review


    The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.
    Original languageEnglish
    Title of host publicationSafe 2007
    Place of PublicationUtrecht, Netherlands
    StatePublished - Nov 2007
    EventSafe 2007 - STW, Veldhoven
    Duration: 29 Nov 200729 Nov 2007


    ConferenceSafe 2007

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