In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

Sofie Put; Eddy Simoen; Stefaan Vanhuylenbroeck; Cor Claeys; Marco Van Uffelen; Paul Leroux; Francis Berghmans

In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

Sofie Put, Eddy Simoen, Stefaan Vanhuylenbroeck, Cor Claeys, Marco Van Uffelen, Paul Leroux, Francis Berghmans

Research output › peer-review

Abstract

The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.

Original language	English
Title of host publication	Safe 2007
Place of Publication	Utrecht, Netherlands
State	Published - Nov 2007
Event	Safe 2007 - STW, Veldhoven Duration: 29 Nov 2007 → 29 Nov 2007

Conference

Conference	Safe 2007
Country/Territory	Netherlands
City	Veldhoven
Period	2007-11-29 → 2007-11-29

Cite this

@inproceedings{867bec1c02704bdb987fe0d4679a4b34,

title = "In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels",

abstract = "The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.",

keywords = "SiGe Heterojunction Bipolar Transistor, Gamma radiation, online measurements, base current recovery",

author = "Sofie Put and Eddy Simoen and Stefaan Vanhuylenbroeck and Cor Claeys and {Van Uffelen}, Marco and Paul Leroux and Francis Berghmans",

note = "Score = 1; Safe 2007 ; Conference date: 29-11-2007 Through 29-11-2007",

year = "2007",

month = nov,

language = "English",

booktitle = "Safe 2007",

}

TY - GEN

T1 - In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

AU - Put, Sofie

AU - Simoen, Eddy

AU - Vanhuylenbroeck, Stefaan

AU - Claeys, Cor

AU - Van Uffelen, Marco

AU - Leroux, Paul

AU - Berghmans, Francis

N1 - Score = 1

PY - 2007/11

Y1 - 2007/11

N2 - The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.

AB - The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.

KW - SiGe Heterojunction Bipolar Transistor

KW - Gamma radiation

KW - online measurements

KW - base current recovery

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_97113

UR - http://knowledgecentre.sckcen.be/so2/bibref/5780

M3 - In-proceedings paper

BT - Safe 2007

CY - Utrecht, Netherlands

T2 - Safe 2007

Y2 - 29 November 2007 through 29 November 2007

ER -