In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

Sofie Put; Eddy Simoen; Stefaan Vanhuylenbroeck; Cor Claeys; Marco Van Uffelen; Paul Leroux; Francis Berghmans

In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

Sofie Put
, Eddy Simoen
, Stefaan Vanhuylenbroeck
, Cor Claeys
, Marco Van Uffelen
, Paul Leroux
, Francis Berghmans

Research output › peer-review

Abstract

The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.

Original language	English
Title of host publication	Safe 2007
Place of Publication	Utrecht, Netherlands
State	Published - Nov 2007
Event	Safe 2007 - STW, Veldhoven Duration: 29 Nov 2007 → 29 Nov 2007

Conference

Conference	Safe 2007
Country/Territory	Netherlands
City	Veldhoven
Period	2007-11-29 → 2007-11-29

Cite this

@inproceedings{867bec1c02704bdb987fe0d4679a4b34,

title = "In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels",

abstract = "The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.",

keywords = "SiGe Heterojunction Bipolar Transistor, Gamma radiation, online measurements, base current recovery",

author = "Sofie Put and Eddy Simoen and Stefaan Vanhuylenbroeck and Cor Claeys and \{Van Uffelen\}, Marco and Paul Leroux and Francis Berghmans",

note = "Score = 1; Safe 2007 ; Conference date: 29-11-2007 Through 29-11-2007",

year = "2007",

month = nov,

language = "English",

booktitle = "Safe 2007",

}

TY - GEN

T1 - In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

AU - Put, Sofie

AU - Simoen, Eddy

AU - Vanhuylenbroeck, Stefaan

AU - Claeys, Cor

AU - Van Uffelen, Marco

AU - Leroux, Paul

AU - Berghmans, Francis

N1 - Score = 1

PY - 2007/11

Y1 - 2007/11

N2 - The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.

AB - The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.

KW - SiGe Heterojunction Bipolar Transistor

KW - Gamma radiation

KW - online measurements

KW - base current recovery

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_97113

UR - http://knowledgecentre.sckcen.be/so2/bibref/5780

M3 - In-proceedings paper

BT - Safe 2007

CY - Utrecht, Netherlands

T2 - Safe 2007

Y2 - 29 November 2007 through 29 November 2007

ER -