The solid state reaction between U(Mo) and Si, leading to the formation of silicides, has been studied using in situ X-ray Diffraction. Samples were prepared by sputter depositing Si in thin layers on U(Mo) substrates and vice versa. Several samples were heated to temperatures up to 950 ºC in a purified helium atmosphere. Even though the measurements were hampered by the undesired oxidation of uranium, the formation of various silicides could be observed. Kissinger analysis on ramp anneals with ramp rates of 0.2, 0.5, 1 and 3 ºC/s have been performed to investigate the kinetics of the formed silicides. Using this method, the apparent activation energy for the different silicide formation reactions was deduced.
|Title of host publication||International Meeting on Reduced Enrichment for Research and Test Reactors|
|Place of Publication||Argonne, IL, United States|
|State||Published - Oct 2010|
|Event||International Meeting on Reduced Enrichment for Research and Test Reactors - Lisbon|
Duration: 10 Oct 2010 → 14 Oct 2010
|Conference||International Meeting on Reduced Enrichment for Research and Test Reactors|
|Period||2010-10-10 → 2010-10-14|