In-Situ X-ray Diffraction Study of the U(Mo)/Si Solid State Reaction

The solid state reaction between U(Mo) and Si, leading to the formation of silicides, has been studied using in situ X-ray Diffraction. Samples were prepared by sputter depositing Si in thin layers on U(Mo) substrates and vice versa. Several samples were heated to temperatures up to 950 ºC in a purified helium atmosphere. Even though the measurements were hampered by the undesired oxidation of uranium, the formation of various silicides could be observed. Kissinger analysis on ramp anneals with ramp rates of 0.2, 0.5, 1 and 3 ºC/s have been performed to investigate the kinetics of the formed silicides. Using this method, the apparent activation energy for the different silicide formation reactions was deduced.