Influence des barrières si-V et si-Cr sur la diffusion de l'aluminium et de l'uranium

Florent Casteels, M. Richards

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    In order to minimize the interdiffusion between aluminium and uranium, two diffusion barriers have been investigated. Multiple barriers, of silicon and vanadium and of silicon and chromium, present better solutions for the problems of the fuel elements of the Orgel reactor, in comparison with single diffusion barriers: a lower diffusion rate and a more economic solution due to lower neutron absorption. The diffusion phenomena and diffusion rates are described for the two quaternary (aluminium-silicon-vanadium-uranium and aluminium-silicon-chromium-uranium) systems and the binary and ternary systems.
    Evaporation techniques were used for the deposition of the chromium or vandium, and the silicon on the uranium samples. During the diffusion process, the two barriers are compared with respect to diffusion rates, formation of intermetallic compounds, uranium concentration gradients and barrier thickness under determined reactor conditions.
    Three diffusion stages have been observed ; the position and duration depend on the nature of the deposited barrier. The penetration rate seems to be greatly influenced by the imperfections In the deposited silicon layer.
    Original languageEnglish
    PublisherSCK CEN
    Number of pages13
    StatePublished - Oct 1964

    Publication series

    NameSCK CEN Reports
    PublisherSCK CEN

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