Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs

S. Put, Eddy Simoen, N. Collaert, A. De Keersgieter, C. Claeys, M. Van Uffelen, P. Leroux

    Research outputpeer-review


    The gamma radiation-induced variation of the transconductance in the subthreshold region is studied for different back-gate voltages and for different kinds of SOI MuGFETs: devices with and without Selective Epitaxial Growth (SEG) and 45 rotated transistors. Wide fin devices show a larger degradation when the back-gate is grounded. The back-channel of narrow fin transistors, on the other hand, needs to be inverted before degradation in the transconductance is observed. The radiation behavior of the transconductance is similar for devices with and without SEG. It is shown that the maximum variation in transconductance correlates with the mobility for narrow fin devices. This mobility varies when the transistor is rotated. For wide fin devices this correlation is not so strong.

    Original languageEnglish
    Title of host publication2009 European Conference on Radiation and Its Effects on Components and Systems
    Subtitle of host publication10th RADECS Conference, RADECS 2009
    Number of pages6
    StatePublished - 2009
    EventRADECS - 2009: 10th European Conference on Radiation Effects on Components and Systems - RADECS association - Radiation Effects on Components and Systems, Brugge
    Duration: 14 Sep 200918 Sep 2009

    Publication series

    NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS


    ConferenceRADECS - 2009
    Abbreviated titleRADECS

    ASJC Scopus subject areas

    • Radiation
    • Electrical and Electronic Engineering

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