Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs

S. Put; Eddy Simoen; N. Collaert; A. De Keersgieter; C. Claeys; M. Van Uffelen; P. Leroux

doi:10.1109/RADECS.2009.5994545

Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs

S. Put, Eddy Simoen, N. Collaert, A. De Keersgieter, C. Claeys, M. Van Uffelen, P. Leroux

Research output › peer-review

Abstract

The gamma radiation-induced variation of the transconductance in the subthreshold region is studied for different back-gate voltages and for different kinds of SOI MuGFETs: devices with and without Selective Epitaxial Growth (SEG) and 45 rotated transistors. Wide fin devices show a larger degradation when the back-gate is grounded. The back-channel of narrow fin transistors, on the other hand, needs to be inverted before degradation in the transconductance is observed. The radiation behavior of the transconductance is similar for devices with and without SEG. It is shown that the maximum variation in transconductance correlates with the mobility for narrow fin devices. This mobility varies when the transistor is rotated. For wide fin devices this correlation is not so strong.

Original language	English
Title of host publication	2009 European Conference on Radiation and Its Effects on Components and Systems
Subtitle of host publication	10th RADECS Conference, RADECS 2009
Pages	14-19
Number of pages	6
DOIs	https://doi.org/10.1109/RADECS.2009.5994545
State	Published - 2009
Event	RADECS - 2009: 10th European Conference on Radiation Effects on Components and Systems - RADECS association - Radiation Effects on Components and Systems, Brugge Duration: 14 Sep 2009 → 18 Sep 2009

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Conference

Conference	RADECS - 2009
Abbreviated title	RADECS
Country/Territory	Belgium
City	Brugge
Period	2009-09-14 → 2009-09-18

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2009.5994545License: Unspecified

Cite this

Put, S., Simoen, E., Collaert, N., De Keersgieter, A., Claeys, C., Van Uffelen, M., & Leroux, P. (2009). Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs. In 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009 (pp. 14-19). Article 5994545 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2009.5994545

Put, S. ; Simoen, Eddy ; Collaert, N. et al. / Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs. 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. pp. 14-19 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

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title = "Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs",

abstract = "The gamma radiation-induced variation of the transconductance in the subthreshold region is studied for different back-gate voltages and for different kinds of SOI MuGFETs: devices with and without Selective Epitaxial Growth (SEG) and 45 rotated transistors. Wide fin devices show a larger degradation when the back-gate is grounded. The back-channel of narrow fin transistors, on the other hand, needs to be inverted before degradation in the transconductance is observed. The radiation behavior of the transconductance is similar for devices with and without SEG. It is shown that the maximum variation in transconductance correlates with the mobility for narrow fin devices. This mobility varies when the transistor is rotated. For wide fin devices this correlation is not so strong.",

keywords = "Back-gate bias, Gamma irradiation, MuGFETs, Rotated transistors, Selective Epitaxial Growth (SEG), Transconductance",

author = "S. Put and Eddy Simoen and N. Collaert and {De Keersgieter}, A. and C. Claeys and {Van Uffelen}, M. and P. Leroux",

year = "2009",

doi = "10.1109/RADECS.2009.5994545",

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pages = "14--19",

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Put, S, Simoen, E, Collaert, N, De Keersgieter, A, Claeys, C, Van Uffelen, M & Leroux, P 2009, Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs. in 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009., 5994545, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, pp. 14-19, RADECS - 2009, Brugge, Belgium, 2009-09-14. https://doi.org/10.1109/RADECS.2009.5994545

Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs. / Put, S.; Simoen, Eddy; Collaert, N. et al.
2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. p. 14-19 5994545 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output › peer-review

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T1 - Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs

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AB - The gamma radiation-induced variation of the transconductance in the subthreshold region is studied for different back-gate voltages and for different kinds of SOI MuGFETs: devices with and without Selective Epitaxial Growth (SEG) and 45 rotated transistors. Wide fin devices show a larger degradation when the back-gate is grounded. The back-channel of narrow fin transistors, on the other hand, needs to be inverted before degradation in the transconductance is observed. The radiation behavior of the transconductance is similar for devices with and without SEG. It is shown that the maximum variation in transconductance correlates with the mobility for narrow fin devices. This mobility varies when the transistor is rotated. For wide fin devices this correlation is not so strong.

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Put S, Simoen E, Collaert N, De Keersgieter A, Claeys C, Van Uffelen M et al. Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs. In 2009 European Conference on Radiation and Its Effects on Components and Systems: 10th RADECS Conference, RADECS 2009. 2009. p. 14-19. 5994545. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2009.5994545