Influence of fin width on the total dose behavior of p-channel bulk MuGFETs

Sofie Put; Eddy Simoen; Malgorzata Jurczak; Marco Van Uffelen; Paul Leroux; Cor Claeys

doi:10.1109/LED.2009.2039633

Influence of fin width on the total dose behavior of p-channel bulk MuGFETs

Sofie Put, Eddy Simoen, Malgorzata Jurczak, Marco Van Uffelen, Paul Leroux, Cor Claeys

Research output › peer-review

29 Scopus citations

Abstract

A first assessment of the total dose behavior of bulk p-multiple-gate field-effect transistors (MuGFETs) is reported, and special attention is given to the effect of the fin width on the radiation behavior. It was found that the effect of radiation-induced traps in the shallow trench isolation is larger when the fin width decreases. This is in contrast to the total dose behavior of SOI MuGFETs.

Original language	English
Article number	5415614
Pages (from-to)	243-245
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1109/LED.2009.2039633
State	Published - Mar 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2009.2039633

Cite this

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abstract = "A first assessment of the total dose behavior of bulk p-multiple-gate field-effect transistors (MuGFETs) is reported, and special attention is given to the effect of the fin width on the radiation behavior. It was found that the effect of radiation-induced traps in the shallow trench isolation is larger when the fin width decreases. This is in contrast to the total dose behavior of SOI MuGFETs.",

keywords = "Bulk multiple-gate field-effect transistors (MuGFETs), Gamma radiation, Geometric dependence",

author = "Sofie Put and Eddy Simoen and Malgorzata Jurczak and {Van Uffelen}, Marco and Paul Leroux and Cor Claeys",

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AU - Leroux, Paul

AU - Claeys, Cor

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