Abstract
Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.
Original language | English |
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Pages (from-to) | 2107-117 |
Number of pages | 11 |
Journal | Microelectronics Reliability |
Volume | 33 |
Issue number | 14 |
DOIs | |
State | Published - Nov 1993 |