Influence of the testing environment in bipolar transistors radiation resistance results:a benchmark exercise

Marc Decréton; A. Benemann; R. Sharp; Dirk Van Beckhoven; J. Podgorski; L. Pater

doi:10.1016/0026-2714(93)90004-i

Influence of the testing environment in bipolar transistors radiation resistance results:a benchmark exercise

Marc Decréton, A. Benemann, R. Sharp, Dirk Van Beckhoven, J. Podgorski, L. Pater

Research output › peer-review

Abstract

Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.

Original language	English
Pages (from-to)	2107-117
Number of pages	11
Journal	Microelectronics Reliability
Volume	33
Issue number	14
DOIs	https://doi.org/10.1016/0026-2714(93)90004-i
State	Published - Nov 1993

Access to Document

10.1016/0026-2714(93)90004-iLicense: Unspecified

Cite this

@article{a659b285d7b044b49d0ea3c210be007b,

title = "Influence of the testing environment in bipolar transistors radiation resistance results:a benchmark exercise",

abstract = "Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.",

keywords = "Bipolar transistors, Radiation resistance results, Benchmark exercise",

author = "Marc Decr{\'e}ton and A. Benemann and R. Sharp and {Van Beckhoven}, Dirk and J. Podgorski and L. Pater",

year = "1993",

month = nov,

doi = "10.1016/0026-2714(93)90004-i",

language = "English",

volume = "33",

pages = "2107--117",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier",

number = "14",

}

TY - JOUR

T1 - Influence of the testing environment in bipolar transistors radiation resistance results:a benchmark exercise

AU - Decréton, Marc

AU - Benemann, A.

AU - Sharp, R.

AU - Van Beckhoven, Dirk

AU - Podgorski, J.

AU - Pater, L.

PY - 1993/11

Y1 - 1993/11

N2 - Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.

AB - Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.

KW - Bipolar transistors

KW - Radiation resistance results

KW - Benchmark exercise

UR - https://ecm.sckcen.be/OTCS/llisapi.dll?func=ll&objId=45923463&objAction=download&viewType=1

U2 - 10.1016/0026-2714(93)90004-i

DO - 10.1016/0026-2714(93)90004-i

M3 - Article

SN - 0026-2714

VL - 33

SP - 2107

EP - 2117

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 14

ER -