Influence of the testing environment in bipolar transistors radiation resistance results:a benchmark exercise

Marc Decréton; A. Benemann; R. Sharp; Dirk Van Beckhoven; J. Podgorski; L. Pater

doi:10.1016/0026-2714(93)90004-i

Influence of the testing environment in bipolar transistors radiation resistance results:a benchmark exercise

Marc Decréton, A. Benemann, R. Sharp, Dirk Van Beckhoven, J. Podgorski, L. Pater

Research output › peer-review

Abstract

Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.

Original language	English
Pages (from-to)	2107-117
Number of pages	11
Journal	Microelectronics Reliability
Volume	33
Issue number	14
DOIs	https://doi.org/10.1016/0026-2714(93)90004-i
State	Published - Nov 1993

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Cite this

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title = "Influence of the testing environment in bipolar transistors radiation resistance results:a benchmark exercise",

abstract = "Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.",

keywords = "Bipolar transistors, Radiation resistance results, Benchmark exercise",

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AU - Podgorski, J.

AU - Pater, L.

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