Influence of the testing environment in bipolar transistors radiation resistance results: A benchmark exercise

M. Decréton; A. Benemann; Richard E. Sharp; S. Coenen; Dirk Van Beckhoven; J. Podgorski; Lee Pater

doi:10.1016/0026-2714(93)90004-I

Influence of the testing environment in bipolar transistors radiation resistance results: A benchmark exercise

M. Decréton, A. Benemann, Richard E. Sharp, S. Coenen, Dirk Van Beckhoven, J. Podgorski, Lee Pater

Research output › peer-review

Abstract

Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.

Original language	English
Pages (from-to)	2107-2117
Number of pages	11
Journal	Microelectronics Reliability
Volume	33
Issue number	14
DOIs	https://doi.org/10.1016/0026-2714(93)90004-I
State	Published - Nov 1993

Funding

Funders	Funder number
Not added	FI2T-CTg0-0011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/0026-2714(93)90004-ILicense: Unspecified

Cite this

@article{a659b285d7b044b49d0ea3c210be007b,

title = "Influence of the testing environment in bipolar transistors radiation resistance results: A benchmark exercise",

abstract = "Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.",

keywords = "Bipolar transistors, Radiation resistance results, Benchmark exercise",

author = "M. Decr{\'e}ton and A. Benemann and Sharp, {Richard E.} and S. Coenen and {Van Beckhoven}, Dirk and J. Podgorski and Lee Pater",

year = "1993",

month = nov,

doi = "10.1016/0026-2714(93)90004-I",

language = "English",

volume = "33",

pages = "2107--2117",

journal = "Microelectronics Reliability",

publisher = "Elsevier Ltd",

number = "14",

}

TY - JOUR

T1 - Influence of the testing environment in bipolar transistors radiation resistance results

T2 - A benchmark exercise

AU - Decréton, M.

AU - Benemann, A.

AU - Sharp, Richard E.

AU - Coenen, S.

AU - Van Beckhoven, Dirk

AU - Podgorski, J.

AU - Pater, Lee

PY - 1993/11

Y1 - 1993/11

N2 - Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.

AB - Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.

KW - Bipolar transistors

KW - Radiation resistance results

KW - Benchmark exercise

UR - https://ecm.sckcen.be/OTCS/llisapi.dll?func=ll&objId=45923463&objAction=download&viewType=1

U2 - 10.1016/0026-2714(93)90004-I

DO - 10.1016/0026-2714(93)90004-I

M3 - Article

VL - 33

SP - 2107

EP - 2117

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 14

ER -