Influence of the testing environment in bipolar transistors radiation resistance results:a benchmark exercise

Marc Decréton, A. Benemann, R. Sharp, Dirk Van Beckhoven, J. Podgorski, L. Pater

    Research outputpeer-review

    Abstract

    Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.
    Original languageEnglish
    Pages (from-to)2107-117
    Number of pages11
    JournalMicroelectronics Reliability
    Volume33
    Issue number14
    DOIs
    StatePublished - Nov 1993

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