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Influence of the testing environment in bipolar transistors radiation resistance results: A benchmark exercise

  • M. Decréton
  • , A. Benemann
  • , Richard E. Sharp
  • , S. Coenen
  • , Dirk Van Beckhoven
  • , J. Podgorski
  • , Lee Pater

    Research outputpeer-review

    Abstract

    Experimental results on radiation resistance of electronic components are greatly influenced by parameters related to the testing facility environment. This paper presents results on a benchmark exercise conducted in the framework of the Teleman-Entorel project on different bipolar transistors. It discusses the observed differences w.r.t. dose rate, energy spectrum and measurement procedure.

    Original languageEnglish
    Pages (from-to)2107-2117
    Number of pages11
    JournalMicroelectronics Reliability
    Volume33
    Issue number14
    DOIs
    StatePublished - Nov 1993

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Safety, Risk, Reliability and Quality
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

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