Abstract
The interaction of H and He interstitial atoms with ½〈1 1 1〉 and 〈1 0 0〉 loops in tungsten (W) was studied by means of Molecular Static and Molecular Dynamics simulations. A recently developed interatomic potential was benchmarked using data for dislocation loops obtained earlier with two other W potentials available in literature. Molecular Static calculations demonstrated that ½〈1 1 1〉 loops feature a wide spectrum of the binding energy with a maximum value of 1.1 eV for H and 1.93 eV for He as compared to 0.89 eV and 1.56 eV for a straight ½〈1 1 1〉{1 1 0} edge dislocation. For 〈1 0 0〉 loops, the values of the binding energy were found to be 1.63 eV and 2.87 eV for H and He, respectively. These results help to better understand the role played by dislocation loops in H/He retention in tungsten. Based on the obtained results, a contribution of the considered dislocation loops to the trapping and retention under plasma exposure is discussed. © 2016 Elsevier B.V.
Original language | English |
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Pages (from-to) | 164-168 |
Number of pages | 5 |
Journal | Nuclear Instruments and Methods in Physics Research Section B |
Volume | 393 |
DOIs | |
State | Published - 15 Feb 2017 |
Event | 2016 - COSIRES: Computer Simulation of Radiation Effects in Solids - Loughborough Duration: 19 Jun 2016 → 24 Jun 2016 http://www.cosires2016.co.uk/ |