Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field

M. Kalitzova; A. Peeva; Velislava Ignatova; O. I. Lebedev; G. Zollo; G. Vitali

doi:10.1016/j.nimb.2005.08.017

Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field

M. Kalitzova, A. Peeva, Velislava Ignatova, O. I. Lebedev, G. Zollo, G. Vitali

Research output › peer-review

Abstract

The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te ⁺ and Bi⁺ implanted (1 0 0) Si was investigated by cross-sectional high resolution transmission electron microscopy and four-point probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te⁺ and about 3 for Bi⁺ irradiation.

Original language	English
Pages (from-to)	209-213
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	242
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.08.017
State	Published - Jan 2006

Funding

The authors would like gratefully to thank Dr. K. Gesheva for HFEMF annealing and sheet resistance measurements of the specimens. Also, we would like to acknowledge stimulating discussions with Prof. N. Pashov. This work was partially supported by Bulgarian NSF research project No. F 1310.

Funders	Funder number
BNSF - Bulgarian National Science Fund	F 1310

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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Cite this

Kalitzova, M., Peeva, A., Ignatova, V., Lebedev, O. I., Zollo, G., & Vitali, G. (2006). Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242(1-2), 209-213. https://doi.org/10.1016/j.nimb.2005.08.017

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abstract = "The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te + and Bi+ implanted (1 0 0) Si was investigated by cross-sectional high resolution transmission electron microscopy and four-point probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te+ and about 3 for Bi+ irradiation.",

keywords = "High frequency electromagnetic field annealing, HRTEM, Ion implantation, Nanoclusters, Sheet resistance",

author = "M. Kalitzova and A. Peeva and Velislava Ignatova and Lebedev, {O. I.} and G. Zollo and G. Vitali",

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Kalitzova, M, Peeva, A, Ignatova, V, Lebedev, OI, Zollo, G & Vitali, G 2006, 'Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 242, no. 1-2, pp. 209-213. https://doi.org/10.1016/j.nimb.2005.08.017

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T2 - The effect of post-implantation high frequency electromagnetic field

AU - Kalitzova, M.

AU - Peeva, A.

AU - Ignatova, Velislava

AU - Lebedev, O. I.

AU - Zollo, G.

AU - Vitali, G.

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AB - The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te + and Bi+ implanted (1 0 0) Si was investigated by cross-sectional high resolution transmission electron microscopy and four-point probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te+ and about 3 for Bi+ irradiation.

KW - High frequency electromagnetic field annealing

KW - HRTEM

KW - Ion implantation

KW - Nanoclusters

KW - Sheet resistance

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