Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field

M. Kalitzova, A. Peeva, Velislava Ignatova, O. I. Lebedev, G. Zollo, G. Vitali

    Research outputpeer-review


    The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te + and Bi+ implanted (1 0 0) Si was investigated by cross-sectional high resolution transmission electron microscopy and four-point probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te+ and about 3 for Bi+ irradiation.

    Original languageEnglish
    Pages (from-to)209-213
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Issue number1-2
    StatePublished - Jan 2006


    The authors would like gratefully to thank Dr. K. Gesheva for HFEMF annealing and sheet resistance measurements of the specimens. Also, we would like to acknowledge stimulating discussions with Prof. N. Pashov. This work was partially supported by Bulgarian NSF research project No. F 1310.

    FundersFunder number
    BNSF - Bulgarian National Science FundF 1310

      ASJC Scopus subject areas

      • Nuclear and High Energy Physics
      • Instrumentation

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