Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field

M. Kalitzova; A. Peeva; Velislava Ignatova; O. I. Lebedev; G. Zollo; G. Vitali

doi:10.1016/j.nimb.2005.08.017

Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field

M. Kalitzova, A. Peeva, Velislava Ignatova, O. I. Lebedev, G. Zollo, G. Vitali

Research output › peer-review

Abstract

The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te ⁺ and Bi⁺ implanted (1 0 0) Si was investigated by cross-sectional high resolution transmission electron microscopy and four-point probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te⁺ and about 3 for Bi⁺ irradiation.

Original language	English
Pages (from-to)	209-213
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	242
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.08.017
State	Published - Jan 2006

Funding

Funders	Funder number
BNSF - Bulgarian National Science Fund	F 1310

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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Cite this

Kalitzova, M., Peeva, A., Ignatova, V., Lebedev, O. I., Zollo, G., & Vitali, G. (2006). Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242(1-2), 209-213. https://doi.org/10.1016/j.nimb.2005.08.017

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title = "Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field",

abstract = "The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te + and Bi+ implanted (1 0 0) Si was investigated by cross-sectional high resolution transmission electron microscopy and four-point probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te+ and about 3 for Bi+ irradiation.",

keywords = "High frequency electromagnetic field annealing, HRTEM, Ion implantation, Nanoclusters, Sheet resistance",

author = "M. Kalitzova and A. Peeva and Velislava Ignatova and Lebedev, {O. I.} and G. Zollo and G. Vitali",

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Kalitzova, M, Peeva, A, Ignatova, V, Lebedev, OI, Zollo, G & Vitali, G 2006, 'Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 242, no. 1-2, pp. 209-213. https://doi.org/10.1016/j.nimb.2005.08.017

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T1 - Ion beam synthesis of Te and Bi nanoclusters in silicon

T2 - The effect of post-implantation high frequency electromagnetic field

AU - Kalitzova, M.

AU - Peeva, A.

AU - Ignatova, Velislava

AU - Lebedev, O. I.

AU - Zollo, G.

AU - Vitali, G.

PY - 2006/1

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N2 - The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te + and Bi+ implanted (1 0 0) Si was investigated by cross-sectional high resolution transmission electron microscopy and four-point probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te+ and about 3 for Bi+ irradiation.

AB - The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te + and Bi+ implanted (1 0 0) Si was investigated by cross-sectional high resolution transmission electron microscopy and four-point probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te+ and about 3 for Bi+ irradiation.

KW - High frequency electromagnetic field annealing

KW - HRTEM

KW - Ion implantation

KW - Nanoclusters

KW - Sheet resistance

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