The isochronal recovery of the electrical resistivity of cold-worked tantalum and niobium is discussed. The data are analysed following the methods of Simson and Sizmann and of Batarin and Zetzsche. The results agree quaIitativeIy with Waite's theory of diffusion controlled bimolecular recovery processes. Both the Simson and Sizmann and the Batarin and Zetzsche plots show the theoretically predicted change in slope from -Em/2k to -Em/k as recovery proceeds. However, the experimental transition region is much less extended than predicted by theory.
Original language | English |
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Publisher | SCK CEN |
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Number of pages | 9 |
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State | Published - Dec 1964 |
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Name | SCK CEN Reports |
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Publisher | SCK CEN |
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No. | BLG-362 |
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