Abstract
We have performed Raman scattering experiments on bulk single-crystalline silicon, both unirradiated and irradiated with a fast neutron dose of 3.2×1021 n/cm2. From a comparison between both Raman spectra it could be seen that at low Raman frequencies a broad band arises, which is not observed for the unirradiated sample. We identified this peak as the so-called boson peak, which is a typical feature for amorphous solids. Our interpretation is based on several arguments which are invoked in this paper.
| Original language | English |
|---|---|
| Pages (from-to) | 280-282 |
| Number of pages | 3 |
| Journal | Physica B condensed matter. |
| Volume | 263-264 |
| DOIs | |
| State | Published - Mar 1999 |
| Event | 1998 - PHONONS: 9th International Conference on Phonon Scattering in Condensed Matter - Lancaster Duration: 26 Jul 1998 → 31 Jul 1998 Conference number: PHONONS 98 |
Funding
The authors wish to thank Rik Provoost of the `Laboratorium voor Vaste-Stoffysica en Magnetisme’ of the Catholic University Leuven for the Raman scattering data. They are also thankful to B. Ponsard and J. Vermunt of the BR2 department of SCK⋅CEN for the irradiation of the samples and to the Belgian FWO for financial support.
| Funders | Funder number |
|---|---|
| Fonds Wetenschappelijk Onderzoek |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering