TY - JOUR
T1 - Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs
AU - Griffoni, Alessio
AU - Gerardin, Simone
AU - Meneghesso, Gaudenzio
AU - Paccagnella, Alessandro
AU - Simoen, Eddy
AU - Put, Sofie
AU - Claeys, Cor
A2 - Schyns, Marc
N1 - Score = 10
PY - 2008/7
Y1 - 2008/7
N2 - We studied the permanent effects of heavy-ion strikes
on decananometer triple-gate SOI devices.We highlighted the role
of the geometry and the three-dimensional architecture in the response
to heavy ions. Heavy-ion strikes in state-of-the-art Triple-
Gate FETs may have measurable permanent effects, due to microdose
in the buried oxide, breakdown of the gate oxide, or interface
state generation in the side oxide/body interface. This last effect is
particularly interesting since it is related to the verticality of multigate
transistors.
AB - We studied the permanent effects of heavy-ion strikes
on decananometer triple-gate SOI devices.We highlighted the role
of the geometry and the three-dimensional architecture in the response
to heavy ions. Heavy-ion strikes in state-of-the-art Triple-
Gate FETs may have measurable permanent effects, due to microdose
in the buried oxide, breakdown of the gate oxide, or interface
state generation in the side oxide/body interface. This last effect is
particularly interesting since it is related to the verticality of multigate
transistors.
KW - Breakdown
KW - heavy ions
KW - microdose
KW - multigate device
UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_97139
UR - http://knowledgecentre.sckcen.be/so2/bibref/5788
U2 - 10.1109/TNS.2008.2007234
DO - 10.1109/TNS.2008.2007234
M3 - Article
VL - 55
SP - 3182
EP - 3188
JO - IEEE transactions on nuclear Science
JF - IEEE transactions on nuclear Science
SN - 0018-9499
IS - 6
T2 - NSREC 2008
Y2 - 14 July 2008 through 14 July 2008
ER -