Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs

Alessio Griffoni, Simone Gerardin, Gaudenzio Meneghesso, Alessandro Paccagnella, Eddy Simoen, Sofie Put, Cor Claeys, Marc Schyns

    Research outputpeer-review


    We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices.We highlighted the role of the geometry and the three-dimensional architecture in the response to heavy ions. Heavy-ion strikes in state-of-the-art Triple- Gate FETs may have measurable permanent effects, due to microdose in the buried oxide, breakdown of the gate oxide, or interface state generation in the side oxide/body interface. This last effect is particularly interesting since it is related to the verticality of multigate transistors.
    Original languageEnglish
    Pages (from-to)3182-3188
    JournalIEEE transactions on nuclear Science
    Issue number6
    StatePublished - Jul 2008
    EventNSREC 2008 - Tucson, Arizona
    Duration: 14 Jul 200814 Jul 2008

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